High speed semiconductor chip stack

ABSTRACT

The present invention ultra-low loss high energy density dielectric layers having femtosecond (10 −15  sec) polarization response times within a chip stack assembly to extend impedance-matched electrical lengths and mitigate ringing within the chip stack to bring the operational clock speed of the stacked system closer to the intrinsic clock speed(s) of the semiconductor die bonded within chip stack.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Provisional Application No.62/582,182, filed on Nov. 6, 2017, titled HIGH SPEED SEMICONDUCTOR CHIPSTACK and U.S. Provisional Application No. 62/500,177, filed on May 2,2017, titled HIGH SPEED SEMICONDUCTOR CHIP STACK, which is incorporatedby reference herein in its entirety for all purposes.

FIELD OF THE INVENTION

The present invention relates generally to the design and constructionof a three dimensional (3D) stack of semiconductor die (chips) thatimproves system clock speeds of the assembled integrated circuits byusing ultra-low loss, high dielectric density materials within thevicinity of interconnecting transmission lines.

The present invention further relates to configuring a transmission lineon the surface of a semiconductor die embedded within a chip stack, oran embedded interposer bonded to the surface of a semiconductor dieembedded within said chip stack, wherein ultra-low loss/high energydensity dielectric materials in the form of high permeability and highpermittivity dielectrics are periodically arranged along the length ofsaid transmission line to cause it to resonate at a frequency thatmatches the clock speed of one or more semiconductor die embedded withinthe chip stack.

An aspect of the present invention relates to forming resonanttransmission lines located on the surface of a semiconductor die orinterposer that comprise periodic arrangements of ultra-low loss highpermittivity and high permeability dielectric materials that havecharacteristic impedance that is matched to the output and inputimpedance of semiconductor die embedded within a chip with which theresonant transmission lines are in electrical communication.

The present invention additionally relates to geometric featurescomprising magnetic materials located in the vicinity of a verticalinterconnect (via) to minimize electromagnetic reflections at a via.

BACKGROUND TO THE INVENTION

The current technology nodes enabled by Moore's Law allow semiconductordie to operate at higher clock speeds. An integrated circuit (“IC”) willtest at 20 GHz clock speeds as a bare die on a wafer, but that intrinsicclock speed is reduced to clock speeds ranging from 2.5 GHz to 3.4 GHzwhen the IC is packaged and electrically connected to a printed circuitboard (“PCB”). IC clock speed improves to frequencies in the range of7-7.5 GHz, roughly one-third of the bare dies' intrinsic clock speeds,when the semiconductor die are embedded within a chip stack as shown inFIG. 1. Therefore, means that permit a system of electricallyinterconnected IC chips to operate at clock speeds higher than 7-7.5 GHzor at clock speeds that are significantly greater than one third thevalue of their intrinsic clock speed is novel, valuable, and absent fromthe marketplace.

OVERVIEW OF THE RELATED ART

As depicted in FIGS. 1A,1B a semiconductor chip stack 1 relates to thevertical 3 and lateral 5 mounting of bonded die 7 on a major surface 9of a semiconductor chip stack 1, wherein a metal pad array 11 forms thebonded electrical interface between the bonded die 7 and the chip stack1. The chip stack 1 may also comprise a vertical chip stack 13 ofsemiconductors devices 15 that are bonded wafer-to-wafer upon a basesubstrate 17 that may be a semiconductor or an interposer.Non-semiconducting interposers 19 may be included in the vertical chipstack 17. Vertical electrical interconnections between the semiconductordevices 15, interposers 19, bonded die 7 in the vertical chip stack 13and the larger microelectronic system 20 are made through silicon thruvias 21. For the purpose of reviewing the related art, the term chipsmay allude to an interposer 17 or a semiconductor IC, wherein serves theinterposer comprises no active circuitry and merely serves the purposeof providing a passive electrical interconnection between semiconductorIC chips assembled in the semiconductor chip stack 1.

High frequency circuit designs require an extensive use of passivecomponent networks to match impedances and minimize ringing thatcompromises high frequency signal transmission. Modern passivecomponents (resistors 23, capacitors 25, and inductors 27) possessinexact performance tolerances that require their placement upon thesurface of printed circuit board 29 where a component can be easilyreplaced when its performance value is so far out of tolerance that itcauses total system failure during electrical test. As a consequence,even though semiconductor chip stack 1 improves microelectronicintegration, its performance is ultimately limited by the technical andeconomic constraints of a printed circuit board assembly.

Chip stack bonding may be achieved in a variety of ways. A preferredmethod utilizes oxide-oxide low-temperature direct bonding techniquesthat are commonly used in 3D wafer and chip integration, wherein oxidematerial deposited on the surface of the chips is used as the bondingagent. Metal-metal low temperature direct bonding techniques are alsoapplicable at surface areas where exposed metal configured to provide amating surface and electrical interface between chips are available.

Titanium dioxide is a preferred oxide material in stacked chipembodiments because it provides low dielectric loss and has moderatelyhigh dielectric permittivity, ε_(R)=70. These dielectric properties pushsignal coupling and dispersion-related losses to higher frequencies,which, in turn, increase the frequencies at which the chip stack startsringing and becomes nonoperational. High speed/high frequency circuitsneed to be designed as distributed, rather than lumped circuits, andthat passive component networks serve a critical role in properlyterminating high frequency transmission lines to reduce ringing. As willbe discussed in greater detail below, dielectric permittivity, CR, is animportant parameter affecting the ability of interconnected chips tooperate reliably at higher clock speed. It should be noted that, in theprior art, passive circuit elements comprising high dielectric densitymaterials are not included in chip stack assemblies, so their use intuning electrical terminations is limited to their placement on aprinted circuit board, external packaging system or interconnect.

de Rochemont U.S. Pat. No. 7,405,698 entitled “CERAMIC ANTENNA MODULEAND METHODS OF MANUFACTURE THEREOF” (the '698 application) discloses theuse of high permittivity electroceramic to form transmission lines thathave characteristic impedance that matches the input/output impedance ofa semiconductor chip, and the integration of those transmission lines onthe surface of a semiconductor die or electrical interconnect(interposer), but it does not disclose art related to transmission linesthat comprise high permittivity and high permeability dielectricsconfigured along the path of a transmission line that causes thetransmission line to resonate a given frequency or desired clock speed,nor does it disclose the incorporation of high permittivity transmissionlines within a chip stack 1.

de Rochemont U.S. Ser. No. 11/479,159, filed Jun. 30, 2006, entitled“ELECTRICAL COMPONENT AND METHOD OF MANUFACTURE” (the '159 application)discloses and claims high permittivity electroceramics that by virtue ofhaving uniform nanoscale grain size and microstructure exhibitsdielectric permittivity that remains stable over standard operatingtemperatures. It also discloses the incorporation of those highpermittivity electroceramics within a capacitor that is formed on thesurface of a semiconductor die, an electrical interconnect (interposer),or within a printed circuit board, but it does not disclose itsapplication to semiconductor chip stacks.

DEFINITION OF TERMS

The term “average amu” is herein understood to mean the median atomicmass of a unit cell for a crystalline compound derived by summing thefractional atomic mass units contributed by elements forming the crystallattice.

The term “Bitcoin” is herein understood to mean a digitalcrypto-currency that is mined on a Blockchain using a computer algorithmand exists in limited supply.

The term “Blockchain” is herein understood to mean a process used toform a trusted auditable record in a digital ledger that is distributedacross a computer network.

The terms “chemical complexity”, “compositional complexity”, “chemicallycomplex”, or “compositionally complex” are herein understood to refer toa material, such as a metal or superalloy, compound semiconductor, orceramic that consists of three (3) or more elements from the periodictable.

The term “chip stack” is herein understood to mean a bonded threedimensional (31)) assembly of chips that may comprise semiconductor dieand non-semiconductor chip elements, such as sensors,micro-electromechanical systems (“MEMS”), and/or interposer circuitsthat provide passive electrical interconnections between the variouscomponents in the 3D assembly.

The term “critical performance tolerances” is herein understood to referto the ability for all passive components in an electrical circuit tohold performance values within ±1% of the desired values at alloperating temperatures over which the circuit was designed to function.

The term “distributed ledger technology” is herein understood to referto a computational platform that generates a trusted databasedistributed across a computer network wherein trust related to an entryor transaction is assured when a majority of computers that are partiesto the network confirm the entry or transaction and said entry ortransaction remains a permanent record of the computer network that canbe openly inspected and cannot be altered.

The term “electroceramic” is herein understood to refer to itsconventional meaning as being a complex ceramic material that has robustdielectric properties that augment the field densities of appliedelectrical or magnetic stimulus.

The term “integrated circuit” (or “IC”) is herein understood to mean asemiconductor chip into which a large, very large, or ultra-large numberof transistor elements have been embedded.

The term “liquid chemical deposition” (or “LCD”) is herein understood tomean a method that uses liquid precursor solutions to fabricatematerials of arbitrary compositional or chemical complexity as anamorphous laminate or free-standing body or as a crystalline laminate orfree-standing body that have atomic-scale chemical uniformity and amicrostructure that is controllable down to nanoscale dimensions.

The term “MAX-phase material” is herein understood to define achemically complex intermetallic ceramic material having the generalchemical formula M_((n+1))AX_(n), wherein M is first rowtransition-metal element, A is an “A-group” element found in columnsIII-VI of the periodic table, and X is either carbon (C) or nitrogen(N).

The term “microstructure” is herein understood to hold its traditionalmeaning of relating to the grain size, grain chemistry, and grainboundary chemistry of a polycrystalline ceramic material.

The term “passive component” is herein understood to refer to itsconventional definition as an element of an electrical circuit that thatmodulates the phase or amplitude of an electrical signal withoutproducing power gain.

The term “physical layer” is herein understood to understood to mean apatterned or unpatterned material layer embedded within amicroelectronic circuit wherein the material possesses some uniquephysical property that enhances the proper function of the circuit or acircuit element.

The term “resonant gate transistor” is herein understood to refer to anyof the transistor architectures disclosed in de Rochemont, U.S. Ser. No.13/216,192, “POWER FET WITH A RESONANT TRANSISTOR GATE”, wherein thetransistor switching speed is not limited by the capacitance of thetransistor gate, but operates at frequencies that cause the gatecapacitance to resonate with inductive elements embedded within the gatestructure.

The term “standard operating temperatures” is herein understood to meanthe range of temperatures between −40° C. and +125° C.

The term “surface feature” is herein understood to mean one or morepatterned physical layers integrated on the surface of a substratewherein the patterns and physical properties of the physical layers aredesigned to serve some functional purpose within a microelectroniccircuit.

The term “thermoelectric effect” is herein understood to refer to itsconventional definition as the physical phenomenon wherein a temperaturedifferential applied across a material induces a voltage differentialwithin that material, and/or an applied voltage differential across thematerial induces a temperature differential within that material.

The term “thermoelectric material” is herein understood to refer to itsconventional definition as a solid material that exhibits the“thermoelectric effect”.

The term “thermomechanical” is herein understood to refer to itsconventional definition as relating to properties induced or created bythe simultaneous application of elevated temperature and mechanicalforce or pressure.

The term “thinned” is herein understood to refer to an interposer, asensor chip, or a semiconductor die that has been ground and chemicalmechanically polished to reduce its original thickness to a lesserthickness, preferably a thickness on the order of 25 μm or less.

The term “thru via” or “via” is herein understood to refer to itsconventional definition as relating to a vertical electrical connectionthat is made by filling a thru hole with an electrically conductivesubstance.

The terms “tight tolerance” or “critical tolerance” are hereinunderstood to mean a performance value, such as a capacitance,inductance, or resistance that varies less than −0.1% over standardoperating temperatures.

The term “transmission line” is herein understood, for the specificpurpose of this application, to refer to any of the following: amicrostrip 352, a stripline 354, ground-cladded stripline 357,ground-cladded dielectric waveguide 355, and a dielectric slab waveguide359

The term “II-VI compound semiconductor” is herein understood to refer toits conventional meaning describing a compound semiconductor comprisingat least one element from column IIB of the periodic table including:zinc (Zn), cadmium (Cd), or mercury (Hg); and, at least one element fromcolumn VI of the periodic table consisting of: oxygen (O), sulfur (S),selenium (Se), or tellurium (Te).

The term “III-V compound semiconductor” is herein understood to refer toits conventional meaning describing a compound semiconductor comprisingat least one semi-metallic element from column III of the periodic tableincluding: boron (B), aluminum (Al), gallium (Ga), and indium (In); and,at least one gaseous or semi-metallic element from the column V of theperiodic table consisting of: nitrogen (N), phosphorous (P), arsenic(As), antimony (Sb), or bismuth (Bi).

The term “IV-IV compound semiconductor” is herein understood to refer toits conventional meaning describing a compound semiconductor comprisinga plurality of elements from column IV of the periodic table including:carbon (C), silicon (Si), germanium (Ge), tin (Sn), or lead (Pb).

The term “IV-VI compound semiconductor” is herein understood to refer toits conventional meaning describing a compound semiconductor comprisingat least one element from column IV of the periodic table including:carbon (C), silicon (Si), germanium (Ge), tin (Sn), or lead (Pb); and,at least one element from column VI of the periodic table consisting of:sulfur (S), selenium (Se), or tellurium (Te).

SUMMARY OF THE INVENTION

The present invention generally relates to integration of one or moreultra-low loss high energy density dielectric layers having femtosecond(10⁻¹⁵ sec) polarization response times within a chip stack assembly toextend impedance-matched electrical lengths and mitigate ringing withinthe chip stack to bring the operational clock speed of the stackedsystem closer to the intrinsic clock speed(s) of the semiconductor diebonded within chip stack.

An additional embodiment of the present invention relates to theinclusion of high efficiency thermoelectric devices in thermalcommunication with MAX-phase ceramic layers embedded within the highspeed semiconductor chip stack to dissipate heat generated by embeddedsemiconductor die.

Another embodiment of the present invention relates to the integrationof passive components satisfying critical performance tolerances toterminate transmission lines within the high speed chip stack.

A yet another embodiment of the present invention relates to formationor bonding of passive components satisfying critical performancetolerances on a major surface of the high speed semiconductor chipstack, as well as their electrical connection to one or more interfaciallayers within the high speed chip stack through silicon (semiconductor)thru vias.

A further embodiment of the present invention relates to the electricalconnection of a single layer or multi layer capacitor comprising highenergy density capacitive dielectrics having nanoscale microstructure asa decoupling capacitor for the high speed semiconductor chip stack.

An added embodiment of the present invention relates to the inclusion ofimpedance matching and/or frequency filtering networks within the highspeed semiconductor chip stack, and resonant transmission linescomprising high permittivity and high permeability dielectric materials.

A further additional embodiment relates to the inclusion of terminatedvias within the high speed semiconductor chips stack.

One embodiment of the present invention provides a high-speedsemiconductor chip stack forming an electrical circuit comprising one ormore physical layers of perovskite electroceramic that functions as acapacitive dielectric material and said one or more physical layers areintegrated as part of at least one surface feature on a semiconductordie or an interposer embedded within the high speed semiconductor chipstack wherein the perovskite electroceramic forming said capacitivedielectric material further comprises a uniform distribution of ceramicgrains with a grain size diameter less than 50 nm such that orbitaldeformations constitute the sole mechanism contributing to thedielectric polarization within said capacitive dielectric material.

The capacitive dielectric material may have dielectric polarizationrates measured on femto-second time scales. The perovskiteelectroceramic may have a relative permittivity ε_(R)≥70. The highenergy density capacitive dielectric material may have a relativepermittivity, ε_(R), in the range of 200≤ε_(R)≤800. The capacitivedielectric material may comprise a thermodynamically stable perovskiteelectroceramic. The thermodynamically stable perovskite electroceramicmay comprise titanate, zirconate, hafnate, niobate, or tantalateelectroceramic, or admixture thereof. The perovskite electroceramic maycomprise an admixture of three (3) or more elements from the groupcomprising: scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr),manganese (Mn), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum(Mo), hafnium (Hf), tantalum (Ta), tungsten (W), lanthanum (La), cerium(Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu),gadolinium (Gd), terbium (Tb), dionysium (Dy), holomium (Ho), ytterbium(Yb), indium (In), tin (Sn), lead (Pb), or bismuth (Bi). The perovskiteelectroceramic may have a crystal lattice with an average atomic massunit (amu) that is greater than 25. The crystal lattice may have anaverage atomic mass unit (amu) that is greater than 50. The surfacefeature may be deployed to terminate an electrical discontinuity in theelectrical circuit. The surface feature is deployed along a transmissionline. The surface feature and transmission line may be deployed on asemiconductor die. The surface feature and transmission line may bedeployed on an interposer. The surface feature may be deployed at a via.The surface feature and the via may be deployed on a semiconductor die.The surface feature and the via may be deployed on an interposer. The atleast one surface feature may minimize the reflections of higherfrequency harmonics of the digital signal pulse such that theoperational system clock speed of the high-speed semiconductor chipstack optimally matches the slowest clock speed of the semiconductor dieembedded within the high speed semiconductor chip stack. The high-speedsemiconductor chip stack may have one or more embedded semiconductor dieperform an optical or electro-optical circuit function. The high-speedsemiconductor chip stack may have one or more embedded semiconductor diebe a component of a wireless transmitter, wireless receiver, or wirelesstransceiver circuit module. The composition of the perovskiteelectroceramic may be doped with ≤0.05 mol % of silicon dioxide thatforms electrically insulating metal oxide phases at the nanoscale grainboundaries within the perovskite electroceramic to neutralize theformation of internal conductive pathways and dissipation currentswithin the capacitive dielectric material.

Another embodiment of the present invention provides a high-speedsemiconductor chip stack forming an electrical circuit comprises one ormore physical layers of garnet electroceramic that functions as a highpermeability magnetic core material within an inductive element and saidone or more physical layers are integrated as part of at least onesurface feature on a semiconductor die or an interposer embedded withinthe high speed semiconductor chip stack. The high permeability garnetelectroceramic may adopt either a rhombic dodecahedron or trapezohedroncrystal structure, or a combination of the two crystal structures. Thehigh permeability garnet electroceramic may comprise a uniformdistribution of ceramic grains with a grain size diameter ranging from10 nm to 25 μm. The garnet electroceramic forming said high permeabilitycore may comprise a uniform distribution of ceramic grains with a grainsize diameter preferably ranging from 250 nm to 5 μm. The highpermeability garnet electroceramic may comprise an A₃B₂(SiO₄)₃ chemicalformula, where the preferred Group A metal oxides comprise calcium oxide(CaO), magnesium oxide (MgO), iron oxide (FeO), and manganese oxide(MnO), and the preferred Group B metal oxides comprise aluminum oxide(Al₂O₃), iron oxide (Fe₂O₃), chromium oxide (Cr₂O₃), vanadium oxide(V₂O₃), zirconium oxide (ZrO₂), titanium oxide (TiO₂), silicon oxide(SiO₂), yttrium oxide (Y₂O₃), cobalt oxide (Co₃O₄), gadolinium oxide(Gd₂O₃) neodymium oxide (Nd₂O₃) and holmium oxide (Ho₂O₃). The highpermeability garnet electroceramic may comprise an admixture of Group Ametal oxides consisting of calcium oxide (CaO), magnesium oxide (MgO),iron oxide (FeO), and manganese oxide (MnO). The high permeabilitygarnet electroceramic may comprise an admixture of Group B metal oxidesconsisting of aluminum oxide (Al₂O₃), iron oxide (Fe₂O₃), chromium oxide(Cr₂O₃), vanadium oxide (V₂O₃), zirconium oxide (ZrO₂), titanium oxide(TiO₂), silicon oxide (SiO₂), yttrium oxide (Y₂O₃), cobalt oxide(Co₃O₄), gadolinium oxide (Gd₂O₃) neodymium oxide (Nd₂O₃) and holmiumoxide (Ho₂O₃). The high permeability garnet electroceramic may comprisean admixture of Group A metal oxides consisting of calcium oxide (CaO),magnesium oxide (MgO), iron oxide (FeO), and manganese oxide (MnO), andan admixture of Group B metal oxides consisting of aluminum oxide(Al₂O₃), iron oxide (Fe₂O₃), chromium oxide (Cr₂O₃), vanadium oxide(V₂O₃), zirconium oxide (ZrO₂), titanium oxide (TiO₂), silicon oxide(SiO₂), yttrium oxide (Y₂O₃), cobalt oxide (Co₃O₄), gadolinium oxide(Gd₂O₃) neodymium oxide (Nd₂O₃) and holmium oxide (Ho₂O₃). The surfacefeature may be deployed to terminate an electrical discontinuity in theelectrical circuit. The surface feature may be deployed along atransmission line. The surface feature and transmission line may bedeployed on a semiconductor die. The surface feature and transmissionline may be deployed on an interposer. The surface feature may bedeployed at a via. The surface feature and the via may be deployed on asemiconductor die. The surface feature and the via may be deployed on aninterposer. The at least one surface feature may minimize thereflections of higher frequency harmonics of the digital signal pulsesuch that the operational system clock speed of the high-speedsemiconductor chip stack optimally matches the slowest clock speed ofthe semiconductor die embedded within the high speed semiconductor chipstack. The high-speed semiconductor chip stack may have one or moreembedded semiconductor die perform an optical or electro-optical circuitfunction. The high-speed semiconductor chip stack may have one or moreembedded semiconductor die be a component of a wireless transmitter,wireless receiver, or wireless transceiver circuit module. The inductiveelement may have an ultra-low loss material, preferably amorphous, usedas an air gap material. The air gap material may be in contact with aninductive winding. The inductive element may have an ultra-low lossmaterial layer, preferably amorphous, embedded within magnetic core. Theultra-low loss material layer thickness may measure 1-10 nm.

Yet another embodiment of the present invention provides high-speedsemiconductor chip stack comprising a stack of wafer-bondedsemiconductor die that are electrically interconnected to each other andto the system input/output using vias, and may optionally includeinterposers, wherein, surface features formed on the semiconductor dieor interposers embedded within the high-speed semiconductor chip stackcomprise one or more physical layers that are configured to function asa capacitive element and the dielectric material forming said capacitiveelement further comprises perovskite electroceramic consisting of auniform distribution of ceramic grains with a grain size diameter lessthan 50 nm such that orbital deformations constitute the sole mechanismcontributing to the dielectric polarization within said capacitivedielectric material; and surface features formed on the semiconductordie or interposers embedded within the high-speed semiconductor chipstack comprise one or more physical layers that are configured tofunction as an inductive element and the magnetic core material formingsaid inductive element further comprises a garnet electroceramic.

The wafer-bonded semiconductor chips may be bonded to a thicker basesubstrate that comprises a semiconductor carrier or an electricalinterconnect. The wafer-bonded semiconductor chips may be thinned toreduce the profile of the high-speed semiconductor chip stack. Thewafer-bonded chips may further comprise a sensor chip. The sensor chipmay be a MEMS device. The garnet electroceramic mayadopt either arhombic dodecahedron or trapezohedron crystal structure, or acombination of the two crystal structures. The garnet electroceramic mayhave high permeability having μ_(r)≥10. The high permeability garnetelectroceramic comprises an A₃B₂(SiO₄)₃ chemical formula, where thepreferred Group A metal oxides comprise calcium oxide (CaO), magnesiumoxide (MgO), iron oxide (FeO), and manganese oxide (MnO), and thepreferred Group B metal oxides comprise aluminum oxide (Al₂O₃), ironoxide (Fe₂O₃), chromium oxide (Cr₂O₃), vanadium oxide (V₂O₃), zirconiumoxide (ZrO₂), titanium oxide (TiO₂), silicon oxide (SiO₂), yttrium oxide(Y₂O₃), cobalt oxide (Co₃O₄), gadolinium oxide (Gd₂O₃) neodymium oxide(Nd₂O₃) and holmium oxide (Ho₂O₃). The high permeability garnetelectroceramic may comprise an admixture of Group A metal oxidesconsisting of calcium oxide (CaO), magnesium oxide (MgO), iron oxide(FeO), and manganese oxide (MnO). The high permeability garnetelectroceramic may comprise an admixture of Group B metal oxidesconsisting of aluminum oxide (Al₂O₃), iron oxide (Fe₂O₃), chromium oxide(Cr₂O₃), vanadium oxide (V₂O₃), zirconium oxide (ZrO₂), titanium oxide(TiO₂), silicon oxide (SiO₂), yttrium oxide (Y₂O₃), cobalt oxide(Co₃O₄), gadolinium oxide (Gd₂O₃) neodymium oxide (Nd₂O₃) and holmiumoxide (Ho₂O₃). The high permeability garnet electroceramic may comprisean admixture of Group A metal oxides consisting of calcium oxide (CaO),magnesium oxide (MgO), iron oxide (FeO), and manganese oxide (MnO), andan admixture of Group B metal oxides consisting of aluminum oxide(Al₂O₃), iron oxide (Fe₂O₃), chromium oxide (Cr₂O₃), vanadium oxide(V₂O₃), zirconium oxide (ZrO₂), titanium oxide (TiO₂), silicon oxide(SiO₂), yttrium oxide (Y₂O₃), cobalt oxide (Co₃O₄), gadolinium oxide(Gd₂O₃) neodymium oxide (Nd₂O₃) and holmium oxide (Ho₂O₃). Theperovskite electroceramic may be thermodynamically stable and maycomprise titanate, zirconate, hafnate, niobate, or tantalateelectroceramic, or admixture thereof. The thermodynamically stableperovskite electroceramic may comprise an admixture of three (3) or moreelements from the group comprising: scandium (Sc), titanium (Ti),vanadium (V), chromium (Cr), manganese (Mn), zinc (Zn), zirconium (Zr),niobium (Nb), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten(W), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd),samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dionysium(Dy), holomium (Ho), ytterbium (Yb), indium (In), tin (Sn), lead (Pb),or bismuth (Bi). The perovskite electroceramic may have a crystallattice with an average atomic mass unit (amu) that is greater than 25.The crystal lattice may have an average atomic mass unit (amu) that isgreater than 50.

The high speed semiconductor chip stack may have the composition of theperovskite electroceramic doped with ≤0.05 mol % of silicon dioxide thatforms electrically insulating metal oxide phases at the nanoscale grainboundaries within the perovskite electroceramic to neutralize theformation of internal conductive pathways and dissipation currentswithin the capacitive dielectric material. The high-speed semiconductorchip stack may comprise surface features formed on the semiconductor dieor interposers embedded within the high-speed semiconductor chip stackcomprising one or more physical layers that are configured to functionas a resistor, wherein the resistor may comprise a metal, an alloy, asuperalloy or an electroceramic. The high-speed semiconductor chip stackmay comprise a sidewall power plane wherein the sidewall power planeelectrically connects to the power plane on any semiconductor die,interposer, or sensor chip embedded within the high-speed semiconductorchip stack. The high-speed semiconductor chip stack may have whereinpower planes for any semiconductor die, interposer, or sensor chipinternally supplied through vias. The high-speed semiconductor chipstack may comprise a sidewall grounding plane. The high-speedsemiconductor chip stack may comprise sidewall grounding planes that aresymmetrically placed adjacent to the sidewall power plane, such that thesidewall power plane is located between the sidewall grounding planes.The sidewall grounding plane may be in electrical communication withgrounding pads. The grounding pads may route electrical ground tospecific locations on other electrical layers within the high-speedsemiconductor chip stack.

The high-speed semiconductor chip stack may comprise one or more surfacebonded semiconductor die, interposers, or sensor chips that aredie-to-wafer bonded to a major surface of the high-speed semiconductorchip stack, wherein the surface bonded semiconductor die, interposers,or sensor chips are electrically connected to an array of contact padsformed on or formed within the interposer or semiconductor diepositioned at the top of the chip stack to form the major surface of thehigh-speed semiconductor chip stack. The surface mounted semiconductordie may comprise a plurality of semiconductor die bounded as a stackedchip assembly. The stack chip assembly may be a surface mountedhigh-speed semiconductor chip stack. The semiconductor die in thestacked chip assembly may be thinned. The semiconductor die in thesurface mounted high-speed semiconductor chip stack may be thinned. Thehigh-speed semiconductor chip stack may have one or more passivecomponents formed on or bonded to the high speed semiconductor chip andelectrically interconnected through vias and/or transmission lines onthe major surface. The one or more passive components may comprise acapacitive element further comprising a perovskite electroceramicphysical layer as its dielectric body that has a nanoscalemicrostructure and fully polarizes and depolarizes at femtosecond timescales. The high-speed semiconductor chip stack may have one or morehigh energy density dielectric layers consisting of a crystal latticehaving an average atomic mass unit greater than 25 amu, preferably anaverage atomic mass unit greater than 50 amu. The high-speedsemiconductor chip stack may have the composition of the perovskiteelectroceramic doped with ≤0.05 mol % of silicon dioxide that formselectrically insulating metal oxide phases at the nanoscale grainboundaries within the perovskite electroceramic to neutralize theformation of internal conductive pathways and dissipation currentswithin the capacitive dielectric material. The high-speed semiconductorchip stack may have the one or more passive components comprise aninductive element further comprising a garnet electroceramic magneticcore. The one or more passive components may comprise a resistiveelement further comprising a metal, an alloy, a superalloy or anresistive electroceramic. The surface feature may be deployed toterminate an electrical discontinuity in the electrical circuit. Thesurface feature may be deployed along a transmission line. The surfacefeature and transmission line may be deployed on a semiconductor die.The surface feature and transmission line may be deployed on aninterposer. The surface feature may be deployed at a via. The surfacefeature and the via may be deployed on a semiconductor die. The surfacefeature and the via may be deployed on an interposer. The at least onesurface feature may minimize the reflections of higher frequencyharmonics of the digital signal pulse such that the operational systemclock speed of the high-speed semiconductor chip stack optimally matchesthe slowest clock speed of the semiconductor die embedded within thehigh speed semiconductor chip stack. The high-speed semiconductor chipstack may habe one or more embedded semiconductor die perform an opticalor electro-optical circuit function. The high-speed semiconductor chipstack may have one or more embedded semiconductor die function as acomponent of a wireless transmitter, wireless receiver, or wirelesstransceiver circuit module.

Still another embodiment of the present invention provides a capacitiveelement formed or mounted upon a semiconductor die, sensor chip, orinterposer, wherein the capacitive element comprises a physical layer ofhigh energy density dielectric material having relative permittivity,ε_(r), in the range of 200≤ε_(r)≤800 and is electrically insulatingpositioned between two conductive electrodes such that the high energydensity dielectric material further comprises: a perovskiteelectroceramic that is thermodynamically stable and may comprisetitanate, zirconate, hafnate, niobate, or tantalate electroceramic, oradmixture thereof; which further comprises an admixture of three (3) ormore elements from the group comprising: scandium (Sc), titanium (Ti),vanadium (V), chromium (Cr), manganese (Mn), zinc (Zn), zirconium (Zr),niobium (Nb), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten(W), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd),samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dionysium(Dy), holomium (Ho), ytterbium (Yb), indium (In), tin (Sn), lead (Pb),or bismuth (Bi); and has a crystal lattice unit cell with an averageatomic mass of ≥25 amu, preferably ≥50 amu; with, a nanoscalemicrostructure wherein all the grains comprising the perovskiteelectroceramic have uniform grain size less than 50 nm; such that, thepolarization response of the high energy density dielectric material issolely determined by orbital deformations that exhibit polarizationresponse times on the order of femtoseconds (10⁻¹⁵ sec).

The capacitive element may be used as a decoupling capacitor. Thecapacitive element, wherein the semiconductor die, sensor chip, orinterposer upon which it is formed or mounted may be an element of anoptical telecommunications circuit. The capacitive element, wherein thesemiconductor die, sensor chip, or interposer upon which it is formed ormounted may be an element of a wireless receiver, wireless transmitter,or wireless transceiver circuit. The capacitive element may beconfigured as a parallel plate capacitor. The capacitive element may beconfigured as a multilayer decoupling capacitor. The capacitive elementmay be configured as a planar capacitor. The capacitive element may havethe composition of the perovskite electroceramic doped with ≤0.05 mol %of silicon dioxide that forms electrically insulating metal oxide phasesat the nanoscale grain boundaries within the perovskite electroceramicto neutralize the formation of internal conductive pathways anddissipation currents within the capacitive dielectric material. Thecapacitive element may be used as a decoupling capacitor. The capacitiveelement, wherein the semiconductor die, sensor chip, or interposer uponwhich it is formed or mounted may be an element of an opticaltelecommunications circuit. The capacitive element, wherein thesemiconductor die, sensor chip, or interposer upon which it is formed ormounted may be an element of a wireless receiver, wireless transmitter,or wireless transceiver circuit. The capacitive element may beconfigured as a parallel plate capacitor. The capacitive element may beconfigured as a multilayer decoupling capacitor. The capacitive elementmay be configured as a planar capacitor.

A further embodiment of the present invention provides a multilayerdecoupling capacitor that comprises primary and secondary electrodes,wherein, the primary electrode is in electrical communication with aplurality of primary conductor layers; and, the secondary electrode isin electrical communication with a plurality of secondary conductorlayers; wherein, the primary conductor layers and secondary conductorlayers have thicknesses ranging between 100 nm and 200 μm, and, each ofthe primary and secondary conductor layers are interleaved and separatedfrom one another by a high energy density capacitive dielectric layer,wherein, the high energy density capacitive dielectric comprises aperovskite electroceramic that is thermodynamically stable and maycomprise titanate, zirconate, hafnate, niobate, or tantalateelectroceramic, or admixture thereof; which further comprises anadmixture of three (3) or more elements from the group comprising:scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese(Mn), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), hafnium(Hf), tantalum (Ta), tungsten (W), lanthanum (La), cerium (Ce),praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu),gadolinium (Gd), terbium (Tb), dionysium (Dy), holomium (Ho), ytterbium(Yb), indium (In), tin (Sn), lead (Pb), or bismuth (Bi); and, has acrystal lattice unit cell with an average atomic mass of 25 amu,preferably ≥50 amu; with, a nanoscale microstructure wherein all thegrains comprising the perovskite electroceramic have uniform grain sizeless than 50 nm; such that, the polarization response of the high energydensity dielectric material is solely determined by orbital deformationsthat exhibit polarization response times on the order of femtoseconds(10⁻¹⁵ sec).

The multilayer decoupling capacitor may be bonded to or formed on themajor surface of a high-speed semiconductor chip stack. The high-speedsemiconductor chip stack may comprise one or more semiconductor die,sensor chips, or interposers used in an optical telecommunicationscircuit. The high-speed semiconductor chip stack may comprise one ormore semiconductor die, sensor chips, or interposers used in a wirelessreceiver, a wireless transmitter, or wireless transceiver circuit.

A still further embodiment of the present invention provides a chip,comprising a semiconductor die, sensor chip, or interposer, that furthercomprises a surface layer with thickness ranging from 10 nm to 5 mm thatincludes a dielectric core, amorphous silica, grounding pads andgrounding planes, one or more vias, transmission lines and surfacefeatures configured to electrically terminate electromagnetic signals atdiscontinuities in the surface layer and the circuitry embedded on orwithin the chip, wherein the dielectric core material comprises:perovskite electroceramic consisting of a uniform distribution ofceramic grains with a grain size diameter less than 50 nm such thatorbital deformations constitute the sole mechanism contributing to thedielectric polarization with polarization rates on femto-second timescales.

The transmission lines may comprise dielectric core material thatfurther comprises perovskite electroceramic consisting of a uniformdistribution of ceramic grains with a grain size diameter less than 50nm such that orbital deformations constitute the sole mechanismcontributing to the dielectric polarization within said capacitivedielectric material wherein the perovskite electroceramic hasdielectric. The via may be in electrical communication with one or moretransmission lines that comprise a microstrip, a stripline, aground-cladded stripline, ground-cladded dielectric waveguide, or adielectric slab waveguide. The microstrip transmission line may beelectrically connected to a terminated via. The stripline transmissionline may be electrically connected to a terminated via. Theground-cladded stripline transmission line is electrically connected toa terminated via. The ground-cladded dielectric waveguide may beelectromagnetically coupled to a terminated via. The terminated via maybe a stub antenna that electromagnetically couples to the ground-claddeddielectric waveguide. The terminated via may be in electricalcommunication with a radiating element. The radiating element maycomprise a monopole antenna. The radiating element iselectromagnetically coupled to one or more closely coupled directorelements that maximally radiate signal power into the dielectric core ofthe ground-cladded dielectric waveguide. The one or more closely coupleddirector elements may be electrically conducting having a spacing fromthe radiating element or other closely coupled director elements that isless than one quarter of the length of a guided wavelength (0.25λ_(g)).The one or more closely coupled director elements may be a dielectricelement. The dielectric element may be a high energy density dielectric.The monopole antenna may have a maximal length that is oriented to beparallel to the width of the ground-cladded waveguide and measures atleast one tenth of the length of the guided wavelength, (0.10λ_(g)). Thewidth of the waveguide's dielectric core may be at least one half of thelength of the guided wavelength, (0.50λ_(g)). The monopole antennamaximal length may measure at least one half of the length of the guidedwavelength, (0.50λ_(g)). The dielectric core in which the radiatingelement is embedded may be fully enveloped with ground planes and hasgrounding sidewalls on all sides except in the direction of theground-cladded dielectric waveguide. The radiating element may bepositioned a quarter of the length of the guided wavelength (0.25λ_(g))from the grounding sidewall located opposite to the ground-claddedwaveguide. The closely coupled director elements may have constant orvariable spacing between any other closely coupled director element orthe monopole antenna. The radiating element may be an antenna arraycomprising a plurality of radiating bodies, a phasing system, and a feednetwork. The radiating bodies may be dipole elements. The antenna arraymay be an End Fire or Broad Side array. The phasing system may comprisea phase-delayed conducting path. The phasing system may comprise aplurality of feed networks, one for each of the radiating bodies, thatelectrically connect each of the radiating bodies in the antenna arrayto phase-locked loop circuitry that independently tunes the phasedoutput of each radiating element in the antenna array to optimize theelectromagnetic coupling between the antenna array and the dielectriccore of the ground-cladded dielectric waveguide. The feed network mayhave one via comprising the feed network electrically connecting theantenna array to a source signal and another via comprising the feednetwork electrically connecting the antenna array to the return signal.The feed network may have one via comprising the feed networkelectrically connecting one half of the antenna array to a source signaland another via comprising the feed network electrically connecting theremaining half of antenna array to ground. The antenna array may includeclosely coupled director elements. The antenna array may include closelycoupled director elements. The radiating bodies may comprise foldedgeometry elements. The antenna array may further comprise closelycoupled director elements.

The radiating bodies may further comprise folded geometry elements. Theantenna array may further comprise closely coupled director elements.The dielectric slab waveguide may be electromagnetically coupled to aterminated via. The terminated via may be a stub antenna thatelectromagnetically couples to the dielectric slab waveguide. Theterminated via may be in electrical communication with a radiatingelement. The radiating element may comprise a monopole antenna. Theradiating element may be electromagnetically coupled to one or moreclosely coupled director elements that maximally radiate signal powerinto the dielectric core of the dielectric slab waveguide. The one ormore closely coupled director elements may be electrically conductinghaving a spacing from the radiating element or other closely coupleddirector elements that is less than one quarter of the length of aguided wavelength (0.25λ_(g)). The one or more closely coupled directorelements may be a dielectric element. The dielectric element may be ahigh energy density dielectric. The monopole antenna may have a maximallength that is oriented to be parallel to the width of the dielectricslab waveguide and measures at least one tenth of the length of theguided wavelength, (0.10λ_(g)). The width of the dielectric slabwaveguide's dielectric core may be at least one half of the length ofthe guided wavelength, (0.50λ_(g)). The monopole antenna maximal lengthmay measure at least one half of the length of the guided wavelength,(0.50λ_(g)). The dielectric core in which the radiating element isembedded may be fully enveloped with ground planes and has groundingsidewalls on all sides except in the direction of the dielectric slabwaveguide. The radiating element may be positioned a quarter of thelength of the guided wavelength (0.25λ_(g)) from the grounding sidewalllocated opposite to the dielectric slab waveguide. The closely coupleddirector elements may have constant or variable spacing between anyother closely coupled director element or the monopole antenna. Theradiating element may be an antenna array comprising a plurality ofradiating bodies, a phasing system, and a feed network. The theradiating bodies may be dipole elements. The antenna array may be an EndFire or Broad Side array. The phasing system may comprise aphase-delayed conducting path. The phasing system may comprise aplurality of feed networks, one for each of the radiating bodies, thatelectrically connect each of the radiating bodies in the antenna arrayto phase-locked loop circuitry that independently tunes the phasedoutput of each radiating element in the antenna array to optimize theelectromagnetic coupling between the antenna array and the dielectriccore of the dielectric slab waveguide. The feed network may have one viacomprising the feed network electrically connecting the antenna array toa source signal and another via comprising the feed network electricallyconnecting the antenna array to the return signal. The feed network mayhave one via comprising the feed network electrically connecting onehalf of the antenna array to a source signal and another via comprisingthe feed network electrically connecting the remaining half of antennaarray to ground. The antenna array may include closely coupled directorelements. The antenna array may include closely coupled directorelements. The radiating bodies may comprise folded geometry elements.The antenna array may further comprise closely coupled directorelements. The radiating bodies may further comprise folded geometryelements. The antenna array may further comprise closely coupleddirector elements.

The transmission lines may comprise a meta-material dielectricwaveguide. The meta-material core may comprise alternating regions ofmagnetic and non-magnetic dielectric material that independently fillfractional volumes within the dielectric core such that fractionalvolume for each, its shape, extent, and cross-sectional location areconsistently spaced in a periodic fashion along the length of thedielectric waveguide. The meta-material dielectric core may comprise ahost dielectric further comprising a periodic array of dielectricinclusions that may high energy density dielectric or garnet magneticcore material that are configured to create conditions for a resonantstanding wave along the length of the meta-material dielectricwaveguide. The meta-material dielectric waveguide may comprise aterminating via to critically damp a resonant standing wave within thedielectric core. The perovskite electroceramic may be thermodynamicallystable high energy density dielectric and may comprise titanate,zirconate, hafnate, niobate, or tantalate electroceramic, or admixturethereof; which further comprises an admixture of three (3) or moreelements from the group comprising: scandium (Sc), titanium (Ti),vanadium (V), chromium (Cr), manganese (Mn), zinc (Zn), zirconium (Zr),niobium (Nb), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten(W), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd),samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dionysium(Dy), holomium (Ho), ytterbium (Yb), indium (in), tin (Sn), lead (Pb),or bismuth (Bi); and, has a crystal lattice unit cell with an averageatomic mass of ≥25 amu, preferably ≥50 amu. The surface layer maycomprise high permeability garnet electroceramic having λ_(r)≥10. Thehigh permeability garnet electroceramic may comprise silicon oxide(SiO₂), with: one or more Group A metal oxides comprising calcium oxide(CaO), magnesium oxide (MgO), iron oxide (FeO), and manganese oxide(MnO); and, one or more Group B metal oxides comprising aluminum oxide(Al₂O₃), iron oxide (Fe₂O₃), chromium oxide (Cr₂O₃), vanadium oxide(V₂O₃), zirconium oxide (ZrO₂), titanium oxide (TiO₂), silicon oxide(SiO₂), yttrium oxide (Y₂O₃), cobalt oxide (Co₃O₄), gadolinium oxide(Gd₂O₃) neodymium oxide (Nd₂O₃) and holmium oxide (Ho₂O₃). The surfacefeature may comprise a planar resistor element, further comprising aresistive element inserted between two electrical shorts in electricalcommunication with a via or a transmission line. The planar resistorelement may comprise a metal, an alloy, a superalloy, an electroceramic,or a carbide ceramic, preferably a MAX-phase ceramic. The surfacefeature may comprise a planar inductor element, further comprising aserpentine conducting element wound through a high permeability garnetelectroceramic magnetic core inserted between two electrical shorts inelectrical communication with a via or a transmission line. The surfacefeature may comprise a planar capacitor element in electricalcommunication with a via or a transmission line through electricalshorts. The planar capacitor element may comprise a first conductingelement comprising a plurality of digits separated by a gap thatcontains high energy density capacitive dielectric from a secondconducting element also comprising a plurality of digits that interleavethe digits of the first conducting element. The planar capacitor elementmay comprise high energy density dielectric inserted between twoelectrical shorts. The surface layer may have electrical shorts, planarresistors, planar inductors, and planar capacitors configured withparallel and series electrical connections with transmission lines andvias to serve any frequency filtering or impedance matching functionneeded within the surface layer. The vias may serve as nodes used toconnect additional branches to the passive circuit network. Thedielectric core may comprise titanium oxide or hafnium oxide as singlemetal oxides. The chip may be inserted within a high speed semiconductorchip stack.

Yet another embodiment of the present invention provides a terminatedvia comprising a via, a via contact pad, a conducting element, andneighboring connection to electrical ground that are formed as surfacefeatures in a surface layer on a chip, and further comprising animpedance matching network used to electrically terminate a signal atthe via, wherein the impedance matching network may additionallycomprise: one or more inductors, one or more capacitors, or one or moreresistors, one or more transmission lines formed as planar features onthe chip, wherein the one or more planar inductors, planar capacitors,or planar resistors are configured in series or in parallel; and, aplanar capacitor comprises a high energy capacitive dielectric furthercomprising a perovskite electroceramic consisting of a uniformdistribution of ceramic grains having grain size diameter less than 50nm such that orbital deformations constitute the sole mechanismcontributing to the dielectric polarization within said capacitivedielectric material.

The terminated via may comprise high energy capacitive dielectric havingdielectric polarization rates measured on femto-second time scales. Thehigh energy density capacitive dielectric may comprise perovskiteelectroceramic comprising titanate, zirconate, hafnate, niobate, ortantalate electroceramic, or admixture thereof; which further comprisesan admixture of three (3) or more elements from the group comprising:scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese(Mn), zinc (Zn), zirconium (Zr), niobium (Nb), molybdenum (Mo), hafnium(Hf), tantalum (Ta), tungsten (W), lanthanum (La), cerium (Ce),praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu),gadolinium (Gd), terbium (Tb), dionysium (Dy), holomium (Ho), ytterbium(Yb), indium (In), tin (Sn), lead (Pb), or bismuth (Bi); and, has acrystal lattice unit cell with an average atomic mass of ≤25 amu,preferably ≤50 amu. The inductive element may comprise a highpermeability garnet electroceramic magnetic core. The high permeabilitygarnet electroceramic may comprise silicon oxide (SiO2), with: one ormore Group A metal oxides comprising calcium oxide (CaO), magnesiumoxide (MgO), iron oxide (FeO), and manganese oxide (MnO); and, one ormore Group B metal oxides comprising aluminum oxide (Al2O3), iron oxide(Fe2O3), chromium oxide (Cr₂O₃), vanadium oxide (Y2O3), zirconium oxide(ZrO₂), titanium oxide (TiO₂), silicon oxide (SiO2), yttrium oxide(Y2O3), cobalt oxide (Co3O4), gadolinium oxide (Gd2O3) neodymium oxide(Nd2O3) and holmium oxide (Ho2O3). The terminated via, wherein aresistor comprises a resistive element may comprise a metal, a metallicalloy, a metallic superalloy, an electroceramic, or a carbide ceramic,preferably a MAX-phase carbide ceramic. The terminated via, wherein aninductor, a capacitor, or a resistor may be formed as an arcuate elementaround the circumference of the via contact pad. The terminated via,wherein all of the inductors, capacitors and resistors may be formed asarcuate elements around the circumference of the via contact pad. Theterminated via, wherein an inductor, a capacitor, or a resistor may beelectrically connected to the ground pad. The conducting element mayform an electrical connection between the terminated via and othercircuit elements in the surface layer. The conducting element maycomprise a microstrip, stripline, or ground-cladded transmission line.The terminated via may be electrically connected to a radiating element.The radiating element may be a via stub. The radiating element may be amonopole antenna. The radiating element may be a dipole antenna element.The terminated via, wherein the dipole antenna element may be ahalf-wavelength dipole antenna element. The terminated via, wherein theradiating element may comprise a folded geometry. The terminated via,wherein the radiating element may be electrically small. The terminatedvia, wherein the radiating element may be an antenna array with aphasing system. The phasing system may comprise a phase-delayedconducting path. The phasing system may comprise phase-locked loopcircuitry that independently tunes the phased output of the radiatingelement in the antenna array. The phasing system may further comprise atunable element. The conducting element may be a ground-claddeddielectric waveguide or a slab dielectric waveguide. The surface layermay comprise a dielectric core further comprising high energy densitydielectric. The surface layer may further comprise amorphous silica. Theterminated via, wherein an inductive element is a tunable inductiveelement. The terminated via, wherein a resistor may further comprise aresistive element inserted between two electrical shorts in electricalcommunication with a via or a transmission line. The terminated via,wherein an inductor may be a planar inductor comprising a serpentineconducting element wound through a high permeability garnetelectroceramic magnetic core inserted between two electrical shorts inelectrical communication with via, electrical ground, or a transmissionline. The composition of the perovskite electroceramic may be doped with≤0.05 mol % of silicon dioxide that forms electrically insulating metaloxide phases at the nanoscale grain boundaries within the perovskiteelectroceramic to neutralize the formation of internal conductivepathways and dissipation currents within the capacitive dielectricmaterial. The planar capacitor may comprise a first conducting elementcomprising a plurality of digits separated by a gap that contains highenergy density capacitive dielectric from a second conducting elementalso comprising a plurality of digits that interleave the digits of thefirst conducting element. The first conducting element, the secondconducting element and the high energy density dielectric may comprisean arcuate path around the circumference of the terminated via. Theplanar capacitor element may comprise high energy density dielectricinserted between two conducting elements. The two conducting elementsand high energy density dielectric inserted between the two conductingelements may comprise an arcuate path around the circumference of theterminated via. The terminated via may be a thru via. The dielectriccore may be a meta-material dielectric core.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustratively shown and described in referenceto the accompanying drawings, in which:

FIGS. 1A,1B depicts prior art relating to semiconductor chip stacking.

FIGS. 2A thru 2G, 2I and 2J depict the polarization mechanisms withinperovskite electroceramics and a preferred microstructure that improvesignal integrity in semiconductor chip stacks designed to operate athigher clock speeds.

FIGS. 3A,3B,3C depict general features of a high speed semiconductorchip stack.

FIGS. 4A,4B depict the use of high energy density dielectrics incapacitive applications.

FIGS. 4C thru 4I illustrate various transmission line structures.

FIGS. 4J thru 4P illustrate means to electrically connect varioustransmission line structures within a high-speed semiconductor chipstack.

FIGS. 5A thru 5G depict various features that are embedded withininterfacing surface layers that are used to terminate electrical signalcommunications within a layer or between layers of the high speedsemiconductor chip stack.

FIGS. 6A thru 6E depict various embodiments of a terminated via.

FIGS. 7A thru 7F illustrate means to form surface layers.

FIG. 8 depicts a high speed semiconductor chip stack mounted on a fullyintegrated semiconductor carrier.

FIG. 9 is Table II showing the effects of high energy density capacitivedielectric materials.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is illustratively described above in reference tothe disclosed embodiments. Various modifications and changes may be madeto the disclosed embodiments by persons skilled in the art withoutdeparting from the scope of the present invention as defined in theappended claims.

This application incorporates by reference all matter contained in deRochemont U.S. Pat. No. 7,405,698 entitled “CERAMIC ANTENNA MODULE ANDMETHODS OF MANUFACTURE THEREOF” (the '698 application), de RochemontU.S. Pat. No. 8,715,839 filed Jun. 30, 2006, entitled “ELECTRICALCOMPONENT AND METHOD OF MANUFACTURE” (the '839 application), U.S. Pat.No. 8,350,657 (the '657 application), filed Jan. 6, 2007 entitled “POWERMANAGEMENT MODULE AND METHODS OF MANUFACTURE”, de Rochemont U.S. Ser.No. 14/560,935, (the '935 application), filed Dec. 4, 2014 entitled“POWER MANAGEMENT MODULE AND METHODS OF MANUFACTURE”, de Rochemont andKovacs, U.S. Pat. No. 8,715,814, “LIQUID CHEMICAL DEPOSITION PROCESSAPPARATUS AND EMBODIMENTS”, (the '814 application) and U.S. Pat. No.8,354,294 (the '294 application), de Rochemont, “MONOLITHIC DC/DC POWERMANAGEMENT MODULE WITH SURFACE FET”, U.S. Pat. No. 8,552,708 (the '708application), de Rochemont, U.S. Pat. No. 8,749,054, “SEMICONDUCTORCARRIER WITH VERTICAL POWER FET MODULE”, (the '054 application), deRochemont U.S. Pat. No. 9,023,493, “CHEMICALLY COMPLEX ABLATIVEMAX-PHASE MATERIAL AND METHOD OF MANUFACTURE”, (the '493 application),de Rochemont U.S. Pat. Nos. 8,779,489 and 9,153,532, “POWER FET WITH ARESONANT TRANSISTOR GATE”, (the '489 and '532 application), de RochemontU.S. Pat. No. 9,123,768, “SEMICONDUCTOR CHIP CARRIERS WITHMONOLITHICALLY INTEGRATED QUANTUM DOT DEVICES AND METHOD OF MANUFACTURETHEREOF”, (the '768 application), de Rochemont U.S. Pat. No. 8,952,858,“FREQUENCY-SELECTIVE DIPOLE ANTENNAS”, (the '858 application), deRochemont and Kovacs U.S. Pat. No. 9,348,385, “HYBRID COMPUTING MODULE”(the '385 application), and, de Rochemont, “FULLY INTEGRATED)THERMOELECTRIC DEVICES AND THEIR APPLICATION TO AEROSPACE DE-ICINGSYSTEMS”, U.S. Application No. 61/529,302 ('302).

The '698 application instructs on methods and embodiments that providemeta-material dielectrics, including artificial magnetic ground planes,that have dielectric inclusion(s) with performance values that remainstable as a function of operating temperature. This is achieved bycontrolling the dielectric inclusion(s)' microstructure to nanoscaledimensions less than or equal to 50 nm. de Rochemont '839 instructs theintegration of passive components that hold performance values thatremain stable with temperature in printed circuit boards, semiconductorchip packages, wafer-scale SoC die, and power management systems. deRochemont '159 instructs on how LCD is applied to form passive filteringnetworks and quarter wave transformers in radio frequency or wirelessapplications that are integrated into a printed circuit board, ceramicpackage, or semiconductor component. de Rochemont '657 instructs methodsto form an adaptive inductor coil that can be integrated into a printedcircuit board, ceramic package, or semiconductor device. de Rochemont etal. '814 discloses the liquid chemical deposition (LCD) process andapparatus used to produce macroscopically large compositionally complexmaterials, that consist of a theoretically dense network ofpolycrystalline microstructures comprising uniformly distributed grainswith maximum dimensions less than 50 nm. Complex materials are definedto include semiconductors, metals or super alloys, and metal oxideceramics. de Rochemont '814 and '708 instruct on methods and embodimentsrelated to a fully integrated low EMI, high power density inductor coiland/or high power density power management module. de Rochemont '489 and'532 instruct on methods to integrate a field effect transistor thatswitch arbitrarily large currents at arbitrarily high speeds withminimal On-resistance into a fully integrated silicon chip carrier. deRochemont '768 instructs methods and embodiments to integratedsemiconductor layers that produce a 3-dimensional electron gas withinsemiconductor chip carriers and monolithically integratedmicroelectronic modules. de Rochemont '302 instructs methods andembodiments to optimize thermoelectric device performance by integratingchemically complex semiconductor material having nanoscalemicrostructure. de Rochemont '858 instructs means to form a circuitresonant element by folding arms of dipole antenna or transmission lineto induce inductive and capacitive loads through current vectorcoupling. The various embodiments and means claimed in the presentapplication are constructed using liquid chemical deposition (LCD)methods instructed by de Rochemont et al. '814.

LCD methods permit the integration of high chemical complexityelectroceramics on a buried microelectronic layer with the requisitechemical precision to make the finished product economically viable. Itenables chemically complex electroceramics to be selectively depositedon a semiconductor surface at temperatures that do not damage embeddedactive circuitry. It further enables the integration of chemicallycomplex electroceramics with atomic scale chemical uniformity anduniform microstructure, including microstructure that has nanoscaleuniformity irrespective of electroceramic chemical complexity.

Reference is now made to FIGS. 2A,2B,2C,2D,2E,2F,2G to illustrate uniquefeatures of high energy density capacitive dielectrics produced usingLCD methods that contribute to the improved operational performance ofthe high speed semiconductor chip stack 200. illustrated in FIG. 3A.Perovskite electroceramics form exceptional capacitive dielectrics withhigh relative permittivity, CR. FIG. 2A schematically depicts onemechanism of charge polarization within perovskite electroceramics. Theunpolarized state 100 of a perovskite electroceramic crystal whereinrigidly fixed cations and anions 102 are covalently bonded atwell-ordered and regularly repeating positions within a crystallinelattice 104. Perovskite electroceramics also comprise mobile cations 106that hold a neutral position within the crystalline lattice 104 in itsunpolarized state 100 that is balanced by purely ionic electrostaticforces between its positive charge and the excess negative chargesdistributed among rigidly fixed cations and anions 102 within thecrystalline lattice 104. Perovskite electroceramics form a polarizedstate by the application of an external electric field 110, which causesthe mobile cations 106 to undergo a physical displacement 112 within thecrystalline lattice 102. The physical displacement 112 of the mobilecations' 106 positive charge is the mechanism whereby which electricalenergy is stored because the mobile cations 106 will return to itsneutral position within the unpolarized state 100 once the externalelectric field 110 is removed.

The physical displacement 112 is not instantaneous. It will have apolarization time, τ_(polarization), which is a function of theelectroceramics' chemistry. τ_(polarization) will range betweenmicrosecond and nanosecond timescales. This phase delay introduces powerloss and signal distortions to the electrical system. The physicaldisplacement 112 also mechanically distorts the crystalline lattice thatgenerates internal strain and will stress adjacent material layers withwhich the perovskite electroceramic is embedded within an integratedstructure, such as the multilayer storage capacitor 100. This stress cancause thermomechanical fatigue within the component layers of the multilayer storage capacitor 100 over time. The long polarization times,τ_(polarization), also distort the phase of signals traveling throughthe dielectric as it becomes impossible to preserve signal integritywhen the signal is modulated faster than the polarization(depolarization) time, τ_(polarization) of the dielectric. Dielectricmaterials having a polarization response time on the order of 1 μsec(10⁻⁶ seconds) would introduce phase distortions and associated powerloss to signals operating above 1 MHz (10⁶ cycles per second).Similarly, dielectric materials having a polarization response time onthe order of 1 nsec (10⁻⁹ seconds) would introduce phase distortions andassociated power loss to signals operating above 1 GHz (10⁹ cycles persecond). As will be shown in further detail below, these phase and powerdistortions to the higher order harmonic frequencies that form the pulseshape of clocking signals operating in the GHz frequency spectrumultimately induce the ringing that cuts off higher speed systemperformance. This is a consideration for using titanium oxide (TiO₂)layers in chip stack assemblies. It has moderately high relativepermittivity, ε_(R)=70, to improve impedance matching, but does not havemobile cations 106 that contribute slow (μsec to nsec) polarizationresponse times, τ_(polarization).

FIGS. 2B,2C illustrate how the physical displacement 112 is a functionof the grain size of chemically complex perovskite electroceramics andthat the nanoscale control over grain size and grain chemistry enabledby LCD manufacturing methods can be used to eliminate thermomechanicalfatigue, power losses, and phase distortions attributable to thephysical displacement 112 of mobile cations 106. FIG. 2B illustrates thedielectric constant of barium titanate (BaTiO₃) perovskiteelectroceramic as a function of temperature when the electroceramic hasuniform grain size of 200 nm 114, 100 nm 116, and 34 nm 118. As shown inFIG. 2B, barium titanate electroceramic has a substantially higherdielectric constant than titanium oxide. In barium titanate, or anyperovskite electroceramic containing mobile cations 106, orbitaldeformation, illustrated in FIG. 2C, of the rigidly fixed cations andanions 102 that are held within the crystalline lattice 104 are the solepolarization mechanism contributing to the electroceramic dielectricconstant when the electroceramic grain size is constrained to dimensionsless than 50 nm 118. The unpolarized state of rigidly fixed cations andanions 120 comprises a positively charge nucleus 122 surrounded by abalanced orbital electron cloud 124 having offsetting negative chargethat neutralizes the positively charge nucleus 122 and produces no netpolarization. The polarized state of rigidly fixed cations and anions126 is produced by the application of an applied external electric field128 that induces a deformed orbital electron cloud 130. The chargedisplacement induced by the deformed orbital electron cloud 130generates internal atomic polarization components 132A,132B between thenet positive charges of the exposed nucleus 134 of the rigidly fixedcations and anions 120 and the unbalanced negative charge in thedeformed orbital electron cloud 130. The internal atomic polarizationcomponents 132A,132B have polarization and relaxation rates that fullyrespond on femtosecond (10⁻¹⁵ second) timescales.

The physical displacement 112 of mobile cations 106 is generated bycooperative internal electric fields that are only strong enough todisplace the mobile cations 106 and overcome the mechanical inertia thatresists the deformation of the crystalline lattice 104 when theelectroceramic grain size is greater than 50 nm. As explained below, aspecific objective of the present invention minimizes signal distortion,power loss to embed high energy density dielectric layers 300 thatcomprise perovskite electroceramic having uniform grain chemistry andgrain size less than 50 nm within a high speed semiconductor chip stack200.

As is self-evident from FIG. 2C, internal atomic polarization components132A,132B are proportional to the number of electrons within thedeformed orbital electron cloud 130 and the net positive charges of theexposed nucleus 134. Since number of orbital electrons and protonscontributing positive charge to the atomic nuclei of the rigidly fixedcations and anions 106 directly correspond to their atomic mass unit(amu), it is a preferred embodiment of the present invention toconstruct a high speed semiconductor chip stack 200 that incorporateshigh energy density dielectric layers 300 wherein the average amu withinthe crystalline lattice 104 is greater than 25 amu, preferably greaterthan 50 amu. LCD manufacturing methods permit the reliable fabricationof dielectric layers having high chemical complexity comprising three ormore metal oxide components. High average amu leads to higher relativepermittivity, ε_(R). It is a specific preferred embodiment for the highspeed semiconductor chip stack to comprise high energy densitycapacitive dielectrics that have femtosecond polarization response timesand a relative permittivity that is greater than 70, but preferably inthe range of 200≤ε_(R)≤800.

The basic stoichiometry of titanate perovskite electroceramics is givenby the formula equation:M^((I)) _((1-x-y-z))M^((II)) _((x))M^((III)) _((y))M^((IV))_((z))Zr_((1-a-b))Hf_((b))Ti_((a))O₃  (1a)where M^((I)), M^((II)), M^((III)), M^((IV)) are additional metal oxidecomponents that form a thermodynamically stable perovskite crystal andx, y, and z, are fractional molar percentages forming ratios such thatthe sum of all M^((I)), M^((II)), M^((III)), M^((IV)) elementalcomponents satisfies the constraint:(1−x−y−z)+(x+y+z)=1  (1b)And,(1−a−b)+(a+b)=1  (1c)The same general relationship for titanate (Ti-containing), zirconate(Zr-containing), hafnate (Hf-containing) electroceramics applies toniobate and tantalate electroceramics, which are implicitly claimed bythe present invention. Crystal lattices with higher average amu isachieved by incorporating higher amu elements into the perovskitechemical formula. It is therefore a specific embodiment of theapplication to claim high energy density capacitive dielectric layers300 that comprise a perovskite electroceramic that includes three ormore metal oxide components that further comprise an admixture of three(3) or more of the elements listed in Table I.

TABLE I Transition Metal Elements Symbol Sc Ti V Cr Mn Zn Zr Nb Mo Hf TaW amu 21 22 41 42 25 30 40 41 42 72 73 74 Lanthanide Metal ElementsSymbol La Ce Pr Nd Sm Eu Gd Tb Dy Ho Yb amu 57 58 59 60 62 63 64 64 6667 70 Post Transition Metal Elements Symbol In Sn Pb Bi amu 49 50 82 83

Reference is now made to FIGS. 2D,2E,2F&2G to illustrate the improvedsignal integrity at higher clock speed frequencies enabled by thepresent invention. Passive components are frequently required toterminate signals at electrical discontinuities in the transmission linecarrying the signal. An electrical discontinuity 101A,101B willtypically comprise a bend in the transmission line path 103, or a changein the physical materials forming the transmission line path 103. Insemiconductor chip stacks, electrical discontinuities are most prevalentat vias 204 that route a signal from a planar transmission line 205 to avertical path towards another chip or interposer in the stack. A signal105 is transmitted at a characteristic clock speed operating at afrequency having a specific electromagnetic wavelength 107. Sinceelectromagnetic power is reflected at electrical discontinuities, aproperly terminated discontinuity 101A is positioned at a point alongthe transmission line path 103 that causes the amplitude of the signal105 to have a null value at the electrical discontinuity. In thisinstance, there is no signal power reflected back to the signal sourceand the transmitted signal 109A carries the full signal power.

As illustrated in FIG. 2E, an improperly terminated discontinuity 101Bis positioned at a point along the transmission line path 103 where theamplitude of the signal 105 has non-zero value 111 at the discontinuity.In this instance, reflected signal power 113 is reflected back to thesignal source in proportion to the signal amplitude at the improperlyterminated discontinuity 101B and the strength of the discontinuity'sreflection coefficient. This results in an attenuated transmitted signal109B and a process known as “ringing” in the circuit as the reflectedsignal power destructively interferes with the signal 105. In manyinstances it is not possible to position a discontinuity to properlyterminate a transmission line. In these cases, passive componentspositioned at an improperly terminated discontinuity 101B as animpedance matching network to neutralize the reflected signal power 113and to maximize the power of the signal transmitted through thediscontinuity.

As illustrated in FIG. 2F, a digital pulse 115 transmitted at afundamental clock speed is shaped though a wave packet that comprises anelectromagnetic wave 107 corresponding to the fundamental clock speedfrequency f_(o) 117 and harmonic frequency components 119 of thefundamental clock speed frequency f_(o) 117. The pulse shaping harmonicfrequency components 117 must have the precise amplitude values neededto constructively and destructively interfere with each other and thefundamental clock speed frequency f_(o) to shape the digital pulse 115.

FIG. 2G illustrate how nanosecond polarization response times nanosecondcompromise higher system-level operational clock speeds. Semiconductortechnology nodes represent the chip-level integration densities anddefined by the minimum feature size of a transistor. Transistorswitching speeds are limited by gate capacitance, so smaller featuresize corresponds with increasing integrated circuit (“IC”) clock speed.Semiconductor fabrication at current technology nodes allow an IC chipto perform at 20 GHz clock speeds when tested at the wafer scale.However, operational system clock speeds are throttled down to 2.5GHz-3.4 GHz when the chips are connected to a printed circuit board, andto 7 GHz-7.5 GHz when assembled into a chip stack. In each instance, thesemiconductor die are connected to impedance matching networkscomprising passive components having dielectric media with polarizationresponse times limited to nanosecond time scales.

FIG. 2G illustrates characteristic polarization response curves as afunction of time (bottom horizontal axis) and frequency (top horizontalaxis). The performance value of a passive component is mapped as thevertical axis, with 100% representing the performance value needed forthe passive component to neutralize any reflected signals and ringing atdiscontinuity. A capacitive dielectric having a 1 nanosecondpolarization response time is charted as curve 121. As illustrated, thefirst harmonic component at 2 GHz 123 will likely have a diminishedperformance, but still operate at a value close enough to mitigatesignal reflection of that harmonic component. However, as depicted bycurve 121 the drop in the performance value for other higher harmonicfrequency components 117, for instance 4 GHz and at 8 GHz 125 is soprecipitous that the impedance matching network fails to neutralize thesignal reflections at these frequencies. As illustrated in FIG. 2I, thenet result on a digital pulse 115 passing through a discontinuityterminated with passive components comprising dielectric media having apolarization response that is similar to 121 will be distortion 127 ofthe higher frequency harmonic components 119 that results in anunreadable pulse 129 when the system is driven at higher frequency clockspeeds f_(o) 117.

By contrast, dielectric media comprising a microstructure that limit thepolarization response 132A,132B to femtosecond time scales will have apolarization response representative of curve 131, which holdsperformance stable out close to the PetaHertz (PHz) frequency domain(10⁶ GHz). Impedance matching networks comprising dielectric media withthis improved higher frequency performance improve the signal integrityof digital pulses operating above the intrinsic clock speeds of modernsemiconductor die. The improved higher frequency signal integrity inchip stack assemblies driven higher clock speeds improves optical andwireless telecommunications signaling bandwidths. An aspect of thisinvention claims a high-speed semiconductor chip stack that operateswith an operational system clock speed that optimally matches theintrinsic clock speed of the slowest semiconductor die in the chipstack. Additional embodiments of this invention include claims to a highspeed semiconductor chip stack 200 that further comprises embeddedsemiconductor die 218 or 208 that function in an opticaltelecommunications or electro-optic capacity, or a component of awireless transmitter, wireless receiver, or wireless transceiver circuitmodule.

Reference is now made to FIG. 2J to illustrate means to minimizedissipation currents that will introduce power loss and short themultilayer storage capacitor, especially when the thickness d of thehigh energy density dielectric layer 300 is extremely thin (≤100 nm).Often impurities that are introduced during electroceramic processingwill form conductive oxides that are not thermodynamically compatiblewith the electroceramic crystalline lattice 104. These conductive metaloxide species will migrate from the electroceramic grain core 136 to theelectroceramic grain boundaries 138 during processing and formconductive pathways 140 that generate dissipation currents and powerloss. Therefore, a particular aspect of the invention dopes theelectroceramic composition described by equation (1) with small amounts(≤0.05 mol %) of silicon dioxide (SiO₂) that will migrate withconductive metal oxide species from the grain core 136 and into thegrain boundaries 138 to form electrically insulating metal oxide phasesthat resist dissipation currents and neutralize the formation ofinternal conductive pathways 140.

The integration of ultra-low loss, high magnetic permeability (μ_(r)≥10)magnetic cores within inductive elements 226 claimed by the applicationis a specific embodiment of the invention. Garnets are the preferredmagnetic core material at GHz frequencies within a high speedsemiconductor chip stack 200. Garnets adopt either rhombic dodecahedronor trapezohedron crystal structures, or a combination of the two, andhave the following chemical formula:A₃B₂(SiO₄)₃  (2)Where Group A metal oxides have equal molar concentration to siliconoxide and group B metal oxides have molar concentration that is ⅔ themolar concentration of silicon oxide. Group A metal oxides preferred foruse in high permeability garnet electroceramics include: calcium oxide(CaO), magnesium oxide (MgO), iron oxide (FeO), and manganese oxide(MnO). Group B metal oxides preferred for use in high permeabilitygarnet electroceramics include: aluminum oxide (Al₂O₃), iron oxide(Fe₂O₃), chromium oxide (Cr₂O₃), vanadium oxide (V₂O₃), zirconium oxide(ZrO₂), titanium oxide (TiO₂), silicon oxide (SiO₂), yttrium oxide(Y₂O₃), cobalt oxide (Co₃O₄), gadolinium oxide (Gd₂O₃) neodymium oxide(Nd₂O₃) and holmium oxide (Ho₂O₃). Optimal compositions for highpermeability garnet electroceramics comprise admixtures of Group Aand/or Group B metal oxides. It is preferred embodiment of the presentinvention that the high permeability garnet magnetic cores 142integrated in a high-speed semiconductor chip stack 200 have controlledmicrostructure with grain size ranging from 10 nm to 25 μm, preferablyfrom 250 nm to 5 μm. Improved magnetic coupling can be achieved if thegarnet magnetic core 142 further comprises an ultra-loss “air gap”material (not shown for clarity) in immediate contact with an inductivewinding, preferably an amorphous silica air gap material integratedwithin the magnetic core using LCD methods. Eddy current power lossescan be further reduced when the garnet magnetic core 142 furthercomprises one or more internal layers with layer thickness measuring1-10 nm (not shown for clarity) of ultra-low loss material, preferablyamorphous silica, within the magnetic core body.

Reference is now made to FIGS. 3A,3B,3C to illustrate general featuresof a high speed semiconductor chip stack 200 claimed by the presentinvention. The high speed semiconductor chip stack 200 comprises a stackof wafer-bonded chips, preferably thinned wafer-bonded chips, 202 thatare electrically interconnected using vertical interconnections or vias204 that make electrical interconnections between components ondifferent layers of the chip stack 200. The stack of wafer-bonded chips202 may comprise interposers 206, a sensor chip 207, preferablycomprising one or more micro-electromechanical sensor (MEMS) devices, orsemiconductor die 208 and may optionally be mounted on a thicker basesubstrate 210 that may comprise a semiconductor carrier or an electricalinterconnect. Each chip in the stack of wafer-bonded chips 202 will havevarious surface features comprising one or more embedded physical layersfurther comprising perovskite electroceramic that functions ascapacitive elements 222, preferably as high energy density capacitiveelements, that are described in greater detail below. The varioussurface features may also comprise physical layers structured tofunction as resistors 224 or inductive elements 226. In order to operateat higher system clock speeds, as detailed above, it is preferred thatthe physical layers forming a capacitor 222 include a perovskiteelectroceramic wherein atomic orbital deformations constitute the solemechanism to the dielectric's polarization response. Similarly, it ispreferred that physical layers forming the inductive elements comprisegarnet electroceramic.

The high-speed semiconductor chip stack 200 may also comprise a sidewallpower plane 212 that electrically connects to a planar power plane on213 the surface of any semiconductor die 208 or interposer 206 in thestack of wafer bonded chips 202. The grounding planes and power planesfor any semiconductor die, interposer, or sensor chip may also beelectrically connected internally within the chip stack through vias.The high-speed semiconductor chip stack 200 may also comprise a sidewallground plane 214 that covers portions 216 of one or more sides of thehigh-speed semiconductor chip stack 200. It is a preferred embodiment ofthe application that the sidewall power plane 212 be located between twoside sidewall ground planes 214 that are symmetrically placed adjacentto the sidewall power plane 212. The sidewall ground plane may alsocover the entire side 217 of one or more sides of the high speedsemiconductor chip stack 200. The sidewall ground plane 214 electricallyconnects to a planar ground plane 215 on the surface of anysemiconductor die 208, sensor chip 207, or interposer 206 in the stackof wafer bonded chips 202. It is a preferred embodiment of theapplication that the planar power plane 213 be located between two sideplanar ground planes 215 that are symmetrically placed adjacent to theplanar power plane 213. Ground planes may also be in electricalcommunication with grounding pads 219. Grounding pads 219 may makeadditional electrical contact with vias to route electrical ground tospecific locations on other electrical layers within the high-speedsemiconductor chip stack.

The high-speed semiconductor chip stack 200 may optionally includesurface bonded semiconductor die 218 that are die-to-wafer bonded to amajor surface 220 of the high speed semiconductor chip stack 200. Thesurface bonded die are electrically connected to an array of contactpads 221 formed on or formed within the interposer 206 or semiconductordie 208 positioned at the top of chip stack 200. Furthermore, thesurface mounted semiconductor die 218 may alternatively include aplurality of semiconductor die that are bonded as a stacked assembly,preferably as a high-speed semiconductor chip stack 200. The majorsurface 220 at the top of the chip stack may additionally includepassive components fabricated using LCD methods that are formed on orbonded to the major surface 220. The passive components may comprise oneor more decoupling, frequency filtering or tuning capacitive elements222, resistors 224, and inductive elements 226. and are electricallyinterconnected to the high speed semiconductor chip stack through vias204 or transmission lines 205 on the major surface. In general, thesepassive components will protrude from the major surface 220 at the topof the chip stack. It is a preferred embodiment that the capacitiveelements 222 comprise one or more high energy density dielectric layers300 wherein the average amu within the crystalline lattice 104 isgreater than 25 amu, preferably greater than 50 amu, and the high energydensity dielectric layer 300 comprises nanoscale microstructure 118 thatfully polarizes and depolarizes with femtosecond response times. It isan additional preferred embodiment that the magnetic cores of theinductor coils 226 comprise a garnet electroceramic magnetic core 142.The resistive material in the resistor 224 may either comprise a metal,an alloy, superalloy or a resistive electroceramic.

Reference is now made to FIGS. 4A thru 4H to illustrate embodiments inwhich high energy density dielectric 300 layers are applied to theconstruction of a high speed semiconductor chip stack 200. For thepurposes of the application, any and all references to a high energydensity dielectric 300 refers to an insulating material layer having arelative permittivity in the range of 200≤ε_(R)≤800 that remains stableover standard operating temperatures, has a polarization response,τ_(polarization), on the order of femtoseconds, and uniform grain size≤50 nm with boundary materials comprising insulating phases of siliconoxide as illustrated in FIGS. 2B,2C,&2D.

Capacitive dielectrics are used as a temporary reservoir of storedelectromagnetic energy. A simple capacitor will have store and releasecharge at a rate governed by its RC constant (internal resistance(R)×capacitance (C)), but the stored energy cannot be modulated fasterthan τ_(polarization) even if the RC constant is less thanτ_(polarization). In these instances, the slower polarization rates willintroduce distortions and power loss to the modulated signal.

FIG. 4A depicts a single layer parallel plate capacitor 302 comprising ahigh energy density capacitive layer 350, comprising high energy densitydielectric 300, sandwiched by two conductive electrodes 304A,304B. Thecharge Q that is stored on the conductive electrodes 304A,304B is:Q=CV  (3a)where C is the capacitance measured in Farads, and V is the appliedvoltage in Volts. The Capacitance, C, of a parallel plate capacitor isdetermined by the surface area, A, of the conductive electrodes304A,304B, the distance, d, separating the conductive electrodes304A,304B, and the dielectric permittivity (ε₀ε_(R)) of the material 300that fills the distance, d, between the conductive electrodes 304A,304B,C=Aε ₀ε_(R) /d  (3b)where ε₀ is the permittivity of free space, and ER is the relativepermittivity of the dielectric material separating the two conductors.Relative permittivity ε_(R) functions as an electromagnetic lens thatlinearly magnifies the charge stored per unit area. Higher capacitanceper unit area is achieved by forming multilayer capacitor 310structures, wherein the capacitance of a single layer is added inparallel. Small profile size is achieved by forming a planar capacitor404C.

The inherent magnification associated with high energy densitydielectrics 300 is useful in miniaturizing the feature size ofcharacteristic circuit elements. A 3 GHz electromagnetic wave has a 1 cmwavelength, and a 30 GHz electromagnetic wave has a 1 mm wavelength.Maintaining signal integrity at elevated frequencies is highly dependentupon the use of resonating elements to properly terminate signaltransmission lines. The magnification factor of high energy densitydielectric layers 300 is useful in building resonating bodies that areuseful in impedance matching structures and have small enough featuresize to be packaged within a the confines of semiconductor chip stack200 operating in the 7-20 GHz frequency range to improve signalintegrity and signal termination.

Reference is made to FIG. 4B to illustrate a preferred embodiment of thecapacitive elements 222. The multilayer decoupling capacitor 310 thatcomprises a primary electrode 312 and a secondary electrode 314. Theprimary 312 and secondary 314 electrodes are in electrical communicationwith primary conductor layers 316A,316B,316C,316D,316E and secondaryconductor layers 318A,318B,318C,318D, respectively, that are embeddedand interleaved within the multilayer decoupling capacitor 310.Thickness of the primary conductor layers 316A,316B,316C,316D,316E andsecondary conductor layers 318A,318B,318C,318D should be gauged to thecurrent loads and internal resistance for a particular design and willoptimally range in thicknesses that are 100 nm to 200 μm, depending uponthe current loads carried. Each of the primary conductor layers316A,316B,316C,316D,316E and secondary conductor layers318A,318B,318C,318D are separated from one another by a high energydensity capacitive dielectric layers320A,320B,320C,320D,320E,320F,320G,320H. An embodiment of the inventionclaims the use of a multilayer decoupling capacitor 310 in electricalcommunication with a semiconductor chip stack 1 because femtosecondpolarization times, τ_(polarization), of the high energy densitycapacitive dielectric layers 320A,320B,320C,320D,320E,320F,320G, 320Hwill respond in phase with modulated signals. A preferred embodiment ofthe invention has the multilayer decoupling capacitor 310 formed on orbonded to a major surface 220 of the high speed semiconductor chip stack200.

Reference is now made to FIGS. 4C thru 4O and 5A to illustrate preferredembodiments that incorporate a high energy density dielectric 300 withinmicrostrip 352, stripline 354, ground-cladded stripline 357,ground-cladded dielectric waveguide 355, and a dielectric slab waveguide359 used as signal interconnects and how to establish electricalconnections within a high speed semiconductor chip stack 200. Highsignal integrity requires all impedances (input/output/and transmissionline) to be perfectly matched in the system to avoid standing wavereflections that cause ringing in the circuit and degrade higherfrequency performance. Semiconductor die can have input/outputimpedances that vary from values as low as 1Ω or less to values as highas 10¹²Ω depending upon their function. Therefore, there is a need forimpedance matching networks that have small enough feature size to beintegrated within the interfacing surface layers 400,400A,400B at theinterface 402 between wafer bonded chips 202 or die-to-wafer(die-to-interposer) bonded semiconductor die 218 within a high-speedsemiconductor chip stack 200. It is therefore desirable to fashion meansby which a transmission line can be used to match impedances or highenergy density materials can be deployed to minimize the size of passivecomponents used in an impedance matching filter. As detailed below, theapplication of transmission lines comprising a high energy densitycapacitive layer is useful in introducing phase delays, matching to lowimpedance inputs or outputs, and minimizing a characteristic featuresize.

Under the scope of the application, various means may be deployed astransmission lines used to make lateral electrical interconnectionswithin a surface layer 402A,402B fabricated on the face of a die-mountedsemiconductor die 208, sensor device 207 or interposer 206 As will beshown, surface layers are used to interface the major surface 220 ofcomponents embedded within a high-speed semiconductor chip stack 200.Microstrip 352 transmission line may be used in applications whereground shielding is not imperative. A microstrip transmission line 352,depicted in FIG. 4C, comprises a dielectric core 351, which could be ahigh energy density capacitive layer 350, disposed between a groundplane 356 and a signal conducting element 358. The signal conductingelement 358 may comprise a metal, alloy or superalloy, an oxidedielectric, or carbon fabric, preferably carbon nanotubes. Themicrostrip 352 transmission line is constructed as a surface feature 400within a surface layer 402A,402B. Surface layers 402A,402B then form theinterface between stacked components.

As illustrated in FIG. 4D, a stripline 354 transmission line comprises aconductive signal conducting element 358 embedded within a dielectriccore 351 and disposed between an upper ground plane 356A and a lowerground plane 356B. The dielectric core 351 may comprise amorphoussilica, having an ε_(R)≈4, or a metal oxide, preferably a metal oxidecomprising a single elemental metal oxide, such as titanium oxide, orhafnium oxide, or a high energy density dielectric 300 depending uponthe design requirements.

As represented in FIG. 4E, the ground-cladded stripline waveguide 357 isanother alternative transmission line. It comprises a signal conductingelement 358 embedded within a dielectric core 351 disposed betweengrounding pads 219 that function as grounded sidewalls 219A,219B andupper and lower ground planes 356A,356B.

FIG. 4F depicts a ground-cladded dielectric waveguide 355, whichcomprises a dielectric core 351 formed between upper and lower groundplanes 356A,356D and disposed between grounded sidewalls 219A,219B.

As presented in FIG. 4G, a dielectric slab waveguide 359 comprises adielectric core 351 formed upon a ground plane 219 and is enveloped by adielectric cladding 383 that is also formed upon the ground plane 219 tocreate dielectric cladding sidewalls 383A,383B to guide waves within thedielectric core 351. Dielectric cladding 383 may also be insertedbetween the ground plane 219 and the dielectric core 351. (Not shown forclarity). To achieve total internal reflection within a dielectric slabwaveguide 359 the materials selected for dielectric core 351 and thedielectric cladding 383 must satisfy the condition that the refractiveindex of dielectric core (n₃₅₁=√μ₀μ_(R351)ε₀ε_(R351)) is greater thanthe refractive index (n₃₈₄=√μ₀μR₃₈₃ε₀εR₃₈₃) of the dielectric cladding383. Various materials combinations are possible depending upon designobjections for the dielectric slab waveguide 359. On one extreme thedielectric cladding material 383 may comprise pure amorphous silica(ε_(R)=4) while the dielectric core material 351 comprisesphosphorous-doped amorphous silica that raises the refractive indexslightly. Or, the dielectric cladding 383 may comprise titanium oxide(ε_(R)=70), while the dielectric core 351 comprises hafnium oxide(ε_(R)=90). At yet another extreme the dielectric cladding 383 maycomprise a high energy density dielectric 300A (ε_(R)=750) while thedielectric core 351 comprises another high energy density dielectric300B (ε_(R)=800).

As illustrated in FIGS. 4H,4I, the dielectric slab waveguide 359 mayalso comprise a meta-material dielectric core 384,384A,384B, forming ameta-material dielectric waveguide 359. The upper dielectric claddinglayer or ground plane has been removed from the illustrations forpurpose of clarity. For the purposes of this application, ameta-material dielectric shall have the meaning of a compositedielectric body comprising a plurality of dielectric materials that areprecisely placed with periodic patterns within the meta-materialdielectric core 384 to favor a particular electromagnetic mode structureor to create resonant conditions that are precisely tuned to a desiredclock speed and its harmonic frequencies. A characteristic of ameta-material dielectric core 384 is that the component bodies of thevarious dielectrics have physical size less than a wavelength of thefundamental electromagnetic frequencies propagating down the waveguide,such that the dielectric permittivity (ε₀ε_(R)) and permeability(μ₀μ_(R)) of the meta-material core 384 adopts an effective dielectricpermittivity (ε₀ε_(R))_(Eff) and permeability (μ₀μ_(R))_(Eff) that isthe fractional volume average of the component elements. A firstembodiment 384A of the meta-material dielectric core 384 comprises acomposite dielectric core having alternating regions 385,351 furthercomprising magnetic dielectric (μ_(R)≠1) 385, preferably a garnetmagnetic core 142 material, but does not comprise a dielectric host 386.Dielectric core 351, having (μ_(R)=1) comprises the remainder ofmeta-material dielectric core 384A. The magnetic dielectric 385 materialand the dielectric core 351 may occupy any fractional volume, any shape,and be located anywhere within a cross-sectional area of themeta-material dielectric core 384 as long that fractional volume, shape,extent, and cross-sectional location are consistently spaced in periodicfashion along the length 360 of the meta-material dielectric waveguide359.

A second embodiment 384B of the meta-material dielectric core 384 withina dielectric waveguide 359 comprises a host dielectric 386 furthercomprising a periodic array of dielectric inclusions 387 that maycomprise high energy density dielectric 300 or garnet magnetic core 142material. The principal objective for these structures is to createconditions for a resonant standing wave along the length of themeta-material dielectric waveguide that is critically dampened at aterminating via 404E.

The application of meta-material dielectric cores 384 that periodicallyalternate garnet magnetic cores 142 and high energy density dielectric300 or comprise dielectric inclusions 387 along the length of thedielectric waveguide 359 is also a preferred embodiment for thedielectric cores in stripline 354, microstrip 352, stripline 354,ground-cladded stripline 357, ground-cladded dielectric waveguide 355,and a dielectric slab waveguide 359.

The inclusion of high energy density dielectric 300 as layers orinclusions layers within high speed semiconductor chip stacks 200provides multiple functionalities that serve the purpose of the presentinvention. First, they enable the construction of transmission linesthat have low characteristic impedance Z, which is given by:

$\begin{matrix}{Z_{0} = {\sqrt{\frac{L}{C}} \propto \sqrt{\frac{\mu_{R}}{ɛ_{R}}}}} & \left( {4a} \right)\end{matrix}$

Therefore it is advantageous to construct transmission lines or asurface feature comprising high energy density capacitive dielectriclayers 350 that have maximal relative permittivity, ε_(R), to improveimpedance matching with low impedance input and output ports onsemiconductor die within the high-speed semiconductor chip stack 200. inthe system. Similarly, it is advantageous to construct transmissionlines or a surface feature comprising high relative permeability, μ_(R),ultra-low loss garnets 142 when matching the lines to high impedanceports in the system.

As noted above, high energy density dielectrics 300 reducecharacteristic feature size of transmission line and resonating bodiesused to match impedance and terminate electrical connections.Characteristic feature size scales with electromagnetic wavelength,λ_(o), and the guided wavelength, λ_(g), when the electromagnetic waveis propagating through a dielectric medium. Guided wavelength, λ_(g), isreduced in proportion to relative permittivity, ε_(R), asλ_(g) =λo/√{square root over (ε_(R))}  (4b)

In a free-space vacuum, where ε_(R)=1, a 10 GHz signal has anelectromagnetic wavelength of 30 mm, and a 20 GHz signal has anelectromagnetic wavelength of 15 mm, which represent feature sizes thatwould be difficult to accommodate within the physical dimensions of achip stack 1,200. However, within the body of a high energy densitydielectric 300 having a high ER or a garnet magnetic core with magneticpermeability μ_(R)>>1, the guided wavelength λ_(g) is reduced as:λ_(g)=λ_(o)/√{square root over (μ_(R)ε_(R))}  (4c)

Therefore, within a high energy density dielectric 300 having μ_(R)=1and ε_(R)=400 the guided wavelength λg and characteristic feature ofelements and resonating bodies that serve as termination components isreduced by 20×. Thus, a 10 GHz signal would have a guidedelectromagnetic wavelength of 1.5 mm, and a 20 GHz signal has anelectromagnetic wavelength of 0.75 mm. Similarly, within a high energydensity dielectric 300 having μ_(R)=1 and ε_(R)=800 the guidedwavelength λg and characteristic feature of elements and resonatingbodies that serve as termination components is reduced by 28×. Thus, a10 GHz signal would have a guided electromagnetic wavelength of ≈1.1 mm,and a 20 GHz signal has a guided electromagnetic wavelength of ≈0.5 mm.These physical dimensions are more compatibly integrated within theconfines of stacked chip assemblies and are well within thephoto-patterning tolerances of modern microelectronic manufacturing.

Reduced feature sizes proportionally reduce the size requirements ofstrip line 354, waveguide 355, and ground-cladded striplines 357.Waveguide 355 and ground-cladded striplines 357 are preferredembodiments as surface features for making electrical connectionsbecause their TM₀ mode has no cut-off frequency and will transmit powerwith attenuation limited to loss in the high energy density dielectric300 as long as the characteristic dimensions h,w are at least half ofthe guided wavelength, h,w≥0.5λ_(g).

Phase velocities, ν_(p) are proportionally reduced as:ν_(p) ⁼ c/μ _(R)ε_(R)  (4d)where c is the speed of light in a vacuum. The slower ν_(p) willincrease latency, but that will be offset by the shorter physicaldistances that separate microprocessor and memory components within ahigh speed semiconductor chip stack 200. As discussed below, lower phasevelocity will increase the need for impedance matching terminations inthe circuit. However, information, whether composed as a digital pulseor a modulated analog signal, is composed of a fundamental frequency (orclock speed) and a Fourier series of higher order harmonics that shapethe pulse or encode the information as a modulated signal. Thedispersion characteristics of the transmission medium define thevariance in the propagation of higher and lower order frequencies in theFourier series as a function of distance. Dispersion is a function ofthe frequency (co) dependence of the dielectric constantμ₀μ_(R)(ω))ε₀ε_(R)(ω). Dielectric dispersion causes a well-defined pulseto become distorted over longer propagation paths as some frequencies inthe Fourier series have higher propagation velocities than others.Dispersion is most pronounced around a resonance within the dielectricmedium that is determined by the polarization response time,τ_(polarization). The femtosecond polarization response times of thehigh energy density dielectrics 300 pushes the resonance to terahertz(THz) frequencies, minimizing distortion in the transmission ofmodulated signals in the 10-20 GHz frequency range. The use of lowdispersion dielectrics will also facilitate impedance matching in thesystem as the entire group of encoded frequencies can be considered tohave similar propagation characteristics.

In high speed digital design, electrical length, l, is a characteristicof electromagnetic wave propagation along a transmission line thatbecomes an important design consideration as it determines thedimensions over which a circuit can be designed as a lumped circuit orneeds to be designed as a distributed network. Electrical length l isdetermined by the rise time T_(f) (in picoseconds) of the leading edgeof a digital pulse and the delay (D) in the transmission line, measuredin picoseconds per inch as determined by the phase velocity ν_(p),incurred as the digital pulse transitions binary states at the receivingport.l=T _(f) /D  (4d)As a general rule, any transmission line longer than 16 will have to bedesigned as a distributed network having consistent impedance per unitlength with proper termination to avoid ringing. As shown in Table II,the introduction of high energy density capacitive dielectric materialssubstantially shortens the distances over which a high speedsemiconductor chip stack 200 can be designed as a lumped circuit

TABLE II Dielectric Delay rising edges lumped circuit lumped circuitMaterial Constant (ps/in) length (in) length (in) length (mm) Rise Time(ps) 1,000 air 1 85 11.76 1.96 49.80 FR4 4.5 180.31 5.55 0.92 23.48alumina 10 268.79 3.72 0.62 15.75 titania 70 711.16 1.41 0.23 5.95HEDCD-1 200 1202.08 0.83 0.14 3.52 HEDCD-1 800 2404.16 0.42 0.07 0.76Rise Time (ps) 100 air 1 85 1.18 0.20 4.98 FR4 4.5 180.31 0.55 0.09 2.35alumina 10 268.79 0.37 0.06 1.57 titania 70 711.16 0.14 0.02 0.60HEDCD-1 200 1202.08 0.08 0.01 0.35 HEDCD-1 800 2404.16 0.04 0.01 0.18

Reference in now made to FIGS. 4J,4K,4L to illustrate how electricalconnections within a surface layers 400A/400B are made through vias tothe various transmission line structures described above. Conventionalmeans are used to electrically connect microstrip 352, stripline 354,and ground-cladded stripline 357 transmission lines to other componentsin the chip stack. For the case of the ground-cladded stripline 357embedded within a surface layer (depicted as a cutaway illustration inFIG. 4J), dielectric cores 351 are enveloped by grounding surfaces(grounding sidewalls 219 and ground planes 378) and envelope signalconducting elements 358. A single layer via 204A embedded within thedielectric core 351 establishes electrical communication between thesurface layer 400 in which the ground-cladded stripline 357 is embeddedand, in this instance, and surface layer of the chip component locatedimmediately below it in the high-speed semiconductor chip stack 200. Athru via 204B establishes electrical communication between theground-cladded stripline 357 and a plurality of surface layers throughthe surface layers 402A,402B of the semiconductor die 208, sensor chip207, or interposer 206 components immediately above or below it.

Unconventional means are required to electrically interconnect connectground-cladded dielectric waveguide 355, and a dielectric slab waveguide359 to other components in the chip stack. FIG. 4K,4L depict a cutawayillustration of ground-cladded dielectric waveguide 355 embedded withina portion of a single layer 400, where an upper ground plane layer 356Aand an upper layer of the dielectric core 351 are partially removed toexpose the vias 204A,204B and directed radiating elements 388 formed ona base layer of the dielectric core 351. In this embodiment a radiatingelement 388 are either electrically connected or electromagneticallycoupled to the vias 204A,204B. In a preferred embodiment, the radiatingelement 388 comprises a monopole antenna 389 that is in electricalcontact with the vias 204A,204B, and may optionally include closelycoupled director elements 390 that electromagnetically couple to themonopole antenna 389 to maximally radiate signal power into thedielectric core 351. The closely coupled director elements 390 can be anelectrically conducting element or a dielectric element. While themonopole antenna 389 could simply be the stub of the vias 204A,204B, itis an additional preferred embodiment that it have maximal length 391oriented parallel to the width, w, of the dielectric core 351. In thisadditional preferred embodiment, the maximal length 391 of the monopoleantenna 389 should be at least one 10th of the guided wavelength(0.10λ_(g)), preferably at least one half of the guided wavelength(0.50λ_(g)). It is also preferred that the monopole antenna 389 bepositioned a distance 392 that is one quarter of the guided wavelength(0.25λ_(g)) from the grounded sidewall 219C aligned parallel to themaximal length of the monopole antenna 389 and with the width of thedielectric core 351. The closely coupled director elements 390 shouldhave spacing 393 that is less than or equal to one quarter of the guidedwavelength (0.25λ_(g)) from the monopole antenna element and each other.When a plurality of closely coupled director elements 390 are used, thespacing 393 may be constant or variable between monopole antenna 389 andthe closely coupled director elements 390.

FIGS. 4M,4N,4O,4P depict cutaway illustrations in which an antenna array394 is used to couple electromagnetic signals from a via 204 into adielectric core 351 of a ground-cladded dielectric waveguide 355 or adielectric slab waveguide 359. FIG. 4M depicts an antenna array 394 in aregion where upper ground plane 356A and a portion of the dielectriccore 351 have been cutaway to reveal the array on a dielectric core baselayer 351A, with another region where the dielectric core base layer351A has been cutaway to reveal the via feed network 395,395A,395B andthe lower ground plane 356B for the antenna array 394. The antenna arraymay comprise any array configuration. End Fire or Broad Side arrayconfigurations are preferred embodiments as an antenna array 394 in thisapplication for their high directionality.

A principal objective of the present application aims to mitigateconductive power loss in metal traces at higher frequencies. Eliminatingconductive power losses is desirable to reduce thermal loads and theadditional costs of thermal management systems. The reduced dielectricloss and faster polarization response times coupled to the feature sizereduction enabled by high energy density dielectric 300 favors the useof waveguides over conductive traces in high-speed semiconductor chipstacks.

All antenna arrays 394 can be highly directional. An antenna array 394,using an End Fire antenna array as an example, is depicted in FIGS. 4Mthru 4O. An antenna array 394 comprises a plurality of radiating bodies396 and a phasing system 397. The phasing system may comprise a feednetwork with single via 204 system and a variation in the conductorlengths to the individual radiating bodies396A,396B,396C,396D,396E,396A′,396B′,396C′, 396D′,396E′ as depicted inFIGS. 4M thru 4O. Alternatively, the phasing system 397 may alsocomprise a networks wherein vias 204 electrically connect phase-lockedloop circuitry located on an adjacent circuit layer(s) that monitors andoptimizes the waveguide output independently feed each of the radiatingbodies 396A,396B,396C,396D,396E,396A′, 396B′,396C′,396D′,396E′ tooptimize the phased output of each radiating elements in the antennaarray 394. Additionally, the terminated via in the phase-locked loopcircuitry, or any terminated via anywhere in the high speedsemiconductor chip stack, may comprise or be electrically connected to atunable inductor element as instructed in de Rochemont U.S. Ser. No.14/560,935, (the ′935 application)”, incorporated herein by reference.

In the case of an End Fire antenna array, the radiating bodies396A,396B,396C, 396D,396E,396A′,396B′,396C′,396D′,396E′ comprisehalf-wavelength dipole elements that are separated by a distance of aquarter of the guided wavelength (0.25λ_(g)) and the phasing system 397is designed to phase delay the signal by 90° between the individualradiating bodies 396A,396B,396C,396D,396E,396A′,396B′,396C′,396D′,396E′.This causes the phase delayed feed/return signals to constructivelyinterfere with the radiated signals from each of the emitting dipoleelements. This constructive interference is primarily directed off ofthe last radiating bodies 396E,396E′ in the array and down the waveguidein a focused beam. It is a preferred embodiment of the invention tosituate the first radiating bodies 396A,396A′ in the array an optimaldistance 398 from the back ground pad sidewall 219C. This distance isdetermined by the guided wavelength, λ_(g), and varies for a givenantenna array configuration. In the case of the End Fire antenna array,a quarter of the guided wavelength (0.25λ_(g)) from the back ground padsidewall 219C maximizes the power radiated down the waveguide. Theradiating bodies 396A,396B,396C,396D,396E,396A′,396B′,396C′,396D′,396E′need not be linear bodies as depicted FIG. M thru FIG. O. They may beelectrically small and comprise folded geometry elements 399 that impartfrequency-selectivity and added directional gain, as instructed by deRochemont '858 incorporated herein by reference. The folded geometryelements 399 may extend the radiating bodies to have features that existon more than one plane.

The feed network 395 of antenna arrays 394 may comprise a single inputvia 204 but will optimally comprise two vias 204, which may be thru vias204A or single layer vias 204B. One via in the feed network 395 feeds asource signal to half of the individual radiating bodies396A,396B,396C,396D,396E. The other draws a return signal from theindividual radiating bodies 396A′,396B′,396C′,396D′,396E′. In higherfidelity applications, the feed network 395A will route the source andreturn signals through vias 204 to circuitry on other layers. Inapplications with less stringent performance specifications, the feednetwork 395B will route the source signals through vias 204 to circuitryon other layers, while the return signal will make contact with thelower ground plane layer 395B. Antenna arrays 394, radiating bodies 396,and folded geometry elements 399 may further comprise closely coupleddirector elements 390 that may comprise a conducting body, a dielectric,or a high energy density dielectric 300.

While these unconventional means are developed for dielectric waveguidesthey are universally applicable to all transmission lines in thisapplication.

Reference is now made to FIGS. 5A-thru 5G to illustrate the use ofplanar surface features 404A,404B,404C,404D to route signals withinsurface layers 400A,400B and properly terminate a transmission linewithin the high speed semiconductor chip stack. For the purpose ofclarity, the term “transmission line” or “transmission lines” shallherein be understood to convey the meaning as provided in the Definitionof Terms section above.

Planar surface features 404A,404B,404C,404D are integrated into surfacelayers 400A,400B that conjoin at the interfacial boundaries 402 betweenstacked components (semiconductor die 202, sensor chips, andinterposers) and surface bonded die 218 within a high speedsemiconductor chip stack 200. The surface layers 400A,400B comprisedielectric cores 351, which is not shown in FIGS. 3A, 5B thru 5F forvisual clarity. The surface layers 402A,402B may range in thickness from10 nm to 5 mm, but preferably have thickness in the range from 0.1 μm to500 μm.

Surface features 404A,404B,404C,404D are specifically integrated intosurface layers 400A,400B to function as distributed capacitance orinductance along transmission lines or impedance matching elements thatelectrically terminate electrical interconnections within the surfacelayers 400A,400B, or between vias 204. Vias 204 may be a single layervia 204A that terminates in a surface layer 400A,400B or a thru via 204Bthat electrically connects wafer bonded chips 202 within the high-speedsemiconductor chip stack 200 when surface layers 400A,400B are conjoinedat the interfacial boundaries 402. Thru vias 204B are also found at theinterface between a stack of wafer-bonded chips 202 and surface-mountedsemiconductor die 218. These surface features are embedded within thedielectric core 351, which is not shown in FIGS. 5B thru 5F and FIGS. 6Athru 6E for visual clarity. Via pads 405 are used to electricallyinterconnect surface features 404A,404B,404C,404D with other surfacelayers 400A,400B or surface-mounted semiconductor die 218 in the highspeed semiconductor chip stack 200.

A surface feature may comprise an electrical short 404A that maycomprise any of the transmission line structures depicted in FIGS. 4Cthru 4I. As shown in FIG. 5B, electrical shorts 404A may be used toelectrically connect via pads 405 used to make electrical connectionwith any other circuit element in the stack, or to a ground pad 219.

As depicted in FIG. 5C, a surface feature may alternatively comprise aplanar resistor 404B that comprises a resistive element 406 insertedbetween two electrical shorts 404A. The resistive element 406 maycomprise an electroceramic, a metal, an alloy, a superalloy, or acarbide ceramic, preferably a MAX-Phase ceramic. The planar resistor404B may form electrical connections in series or in parallel with otherresistors or other surface features 404A,404B,404C,404D with otherelectrical shorts in its same surface layer 402A,402B or thru vias 204that route the signal to buried shorts 407 located on other layers inthe high speed semiconductor chip stack 200.

As depicted in FIG. 5D, a surface feature may also include a planarinductor 404C or a planar capacitor 404D. The planar inductor 404Ccomprises a serpentine conducting element 408 that is wound through agarnet electroceramic magnetic core 142 inserted between two electricalshorts 400A. The planar capacitor 404D comprises a first conductingelement 410 comprising a plurality of digits 412 separated by a gap 414that contains high energy density capacitive dielectric 350 from asecond conducting element 416 comprising a plurality of digits 418 thatinterleave between the digits 412 of the of the first conducting element410. All elements of the planar capacitor are inserted between twoelectrical shorts 400A.

As illustrated in FIGS. 5E,5F,&5G, the electrical short 400A, planarresistor 400B, planar inductor 404C, and planar capacitor 4041) may beused to form a simple series connection 420, wherein vias 204 arepositioned to tap into the circuit between the surface features toenable any possible configuration of passive network elements as isneeded to impedance balance an electrical connection or terminate atransmission line. These surface features 404A,404B,404D,404D can beconfigured in any combination of parallel and series interconnections toperform any frequency filtering or impedance matching function aswarranted by a particular frequency filtering or impedance-matchingdesign objective. For example, the surface feature layout illustrated inFIG. 5F configures resistors 400B, inductors 404C, and capacitors 404Das depicted by the circuit diagram illustrated in FIG. 5G, wherein thevias 204 are represented as circuit nodes 420 at which an additionalbranch can be added to the passive circuit network using buried shorts407.

Impedances are most frequently mismatched at physical discontinuitieswithin a transmission line, such as a bend, gap, or change in thephysical dimensions of the transmission line's conducting element.Impedance mismatching is most prevalent at vias, whether they are thruvias or simply a vertical connection to an adjacent layer in the 3Dcircuit construction. Impedance matching is also required toelectrically connect signals traveling in low permittivity (ε_(R))dielectric media that is used in the electrical interconnect structuresof semiconductor die 208 to the high energy density capacitivedielectrics 350 that are incorporated in the surface layers 402A,402Bformed on the interposers 206, sensor chips 207, and semiconductor die208,218 that are bonded into the high speed semiconductor chip stack200. In view of these technical considerations, means that provideimpedance matching at a via 204 or via pad 405 is an essential elementof the present application.

Reference is now made to FIGS. 6A,6B,6C,6D,6D,6E to illustrate theterminated via 500,501 as a preferred embodiment of the invention. Theterminated via 500,550 is a surface feature that comprises a via contactpad 502 in electrical communication with an impedance matching networkthat may also further comprise an inductive element 504, a capacitiveelement 506, and a resistive element 508 that electrically terminatessignals at the via 204 in the surface layer 402A,402B of the high speedsemiconductor chip stack 200. The terminated via 500,501 may alsocomprise an inductive element 504, a capacitive element 506, and aresistive element 508 configured as arcuate elements in series, inparallel, or in series and in parallel around the via contact pad 502.The terminated via may comprise multiple inductive 504, capacitive 506,and resistive 508 elements as may be required to impedance match orterminate signals traveling through via 204. An electrical connection toa grounding pad 219 or ground plane 215 as may be required to establishproper termination, as well as an electrical connection to an electricalshort 400A making connection to other circuit elements in the surfacelayers 402A,402B. The terminated via 500,501 forms electrical connectionwith a conducting element 358 that may comprise a microstrip 352,stripline 354, or ground-cladded stripline 357 transmission line.

FIGS. 6B&6C illustrate a terminated via 500 configured to comprise aplanar inductor 504 and a planar capacitor 506 connected in parallel toa via pad 502 that constitutes a circuit node 420 through a verticalconnection by a via 204 to other circuit elements in the high speedsemiconductor chip stack 200. One end of the planar inductor 504 is inelectrical communication with the via pad 502 at point “A”. The planarinductor 504 comprises a serpentine conducting element consisting ofwindings 506 that meander following an arcuate path beyond the exteriorcircumference (shown to the left) of the via pad 502. A garnet magneticcore 142 is inserted between the arcuate windings 506 of the planarinductor coil, which terminate making an electrical connection to a baseconductive element 508 at point “B”. The planar capacitor 506 comprisesa primary conducting element 510 that is in electrical communicationwith the via pad 502 at point “C”. The primary conducting element 510forms a parallel electrical connection with primary arms 512 that followarcuate paths beyond the exterior circumference (shown to the right) ofthe via pad 502. The planar capacitor 504 further comprises a secondaryconducting element 514 that is in electrical communication with the baseconductive element 508 at point “D”. The second conducting element 514forms a parallel connection with secondary arms 516 that follow arcuatepaths beyond the exterior circumference of the via pad and are insertedbetween the primary arms 512. High energy density capacitive dielectric350 is inserted in the region that separates the primary arms 512 fromthe secondary arms 516. The base conducting element 508 is in electricalcommunication with a resistive element 520. that, in turn, forms anelectrical contact with a terminating conductive element 522 that is inelectrical communication with a ground plane 215.

FIGS. 6D&6E illustrate a terminated via 550 configured to compriseplanar inductors 554,555 and a planar capacitor 556 that are connectedin series and in parallel with planar resistors 558,559 to a via pad 552that constitutes a circuit node 420 through vertical connection by meansof a via 204 to other circuit elements in the high speed semiconductorchip stack 200. A first planar inductor 554 is in electricalcommunication with the via pad 552 at point “A” and is terminated with asurface mounted semiconductor die 218 at point “B”. The via pad 552 isin electrical communication with a first planar resistor 558 at point“C”, which, in turn establishes input electrical contact with a firstarcuate conductor 560 that is one of serpentine windings 561 of a secondplanar inductor 555. The first and second planar inductors 554,555comprise garnet magnetic cores 142. A second arcuate conductor 562electrically connects the output of the second planar inductor 555 to asecond planar resistor 559 at point “D”, and to the capacitor inputelectrode 564 of the planar capacitor 556 at point “E”. The secondplanar resistor 559 maintains electrical contact with the via pad 552 atpoint “F”. High energy density capacitive dielectric 350 is insertedbetween the arcuate arms of the capacitor input electrode 564 and thearcuate arms of the capacitor output electrode 566. The outermostarcuate arm 567 of the capacitor output electrode 566 establisheselectrical contact with a grounding electrode 568 that is in electricalcontact with a ground plane 215 on a surface layer.

FIGS. 6B thru 6E are representative illustrations intended to depict howany network filtering or impedance matching network comprising acombination of passive components configured in series or in parallelcan be integrated within a terminated via 500,550 as intended under thepresent invention. The scope of the inventions claims any configurationof any combination of passive components interconnected with any networkconfiguration either as a terminated via 500,550, a combination ofterminated vias 500,550, a combination of surface features404A,404B,404C,404D, or a combination of surface features and one ormore terminated vias 500,550.

Reference is now made to FIGS. 7A-7F to illustrate methods that depictmeans to assemble wafer-bonded chips 202 or surface bonded semiconductordie into a high speed semiconductor chip stack 200. Although FIGS. 7A-7Fdepict close-up views of the assembly of terminated vias 600 formed on asubstrate 601, the same procedures apply to all surface features400A,400B,400C,400D incorporated into a surface layer. The substrate maybe a processed semiconductor wafer comprising semiconductor die orsensor chips, or it may be a dielectric for an interposer. The firststep comprises the application of a base conducting element layer 603that forms the terminated via. The base conducting element layer 603 maycomprise a metal, like copper, a metallic alloy, a metallic superalloy,a carbide ceramic, preferably a MAX-phase ceramic, or carbon fabric.FIG. 7B illustrates a representative pattern of a base conductingelement layer 603 in a terminated via 600 wherein a serpentineconducting element 602 needed for a planar inductor 626 traces anarcuate path around a via pad 604. Similarly, a first conducting element606 comprising a plurality of digits 608 separated by gap 610 between asecond conducting element 612 comprising a plurality of interleavingdigits 614 that interleave between the digits 608 of the firstconducting element 606 for a planar capacitor 628. A gap 616 in the baseconducting element layer 603 is inserted between two shorts 618A,618Bfor the planar resistor 622. While LCD methods could be applied topatterning the base conducting element layer 603, however, conventionalphotolithographic techniques are preferred due to the tight tolerancesaround vias.

As depicted in FIG. 7C, LCD methods are applied to selectively deposit aresistive element 620 between the gap 616 and the two electrical shorts618A,618B to form a planar resistor 622. Similarly, a garnet magneticcore 624 is selectively deposited over the serpentine conducting element602, to form a planar inductor 626, and high energy density dielectric300 is selectively deposited over the interleaving digits 608,614 toform a planar capacitor 628.

In order to constitute high quality sidewall contact within the gaps610,616 and around the serpentine conducting element 602, it isrecommended that the LCD deposits overspray the targeted region. Thisforms protruding material 630 that is selectively deposited on top ofthe base conductive element that is removed by chemical mechanicalpolishing techniques to restore a smooth surface 632 to the surfacefeatures 622,626,628. (See FIG. 7D).

LCD methods are used to selectively deposit non-planar features in thesurface layer that give it unique function, such as thru vias, antennastubs, and antenna arrays. FIG. 7E shows three different via structures.A first via structure 634 terminates in the plane of the substrate 601.A second via structure 636 terminates within the surface layer and wouldbe used as an antenna stub, or connection to a microstrip or striplineconductor. A third via structure is a thru via 638 that passes throughthe surface layer 400A,400B in which the surface features are embeddedwhen it is fully assembled.

LCD methods and chemical mechanical polishing are used to applytransmissions lines 205, dielectrics, and embed the surface features404A,404B,404C,404D. A bonding layer 640 is applied to the dielectriccore 351 forming the surface layer 400A as a final encapsulation step.(See FIG. 7F). The bonding layer 640 comprises a material thatfacilitates direct bonding of a surface layer 400A to another surfacelayer 400B at an interface 402 within a high speed semiconductor chipstack 200. The bonding layer 640 may be a dielectric material liketitanium oxide. Alternatively, the bonding layer 638 may be a conductivemetal, alloy, or superalloy if it is to be used as a ground plane. Afinal chemical polishing step is applied to expose the thru vias 638within the dielectric core 351 at the bonding surface 642. The substrate601 may be thinned and back side polished prior to configuring the chipinto a high speed semiconductor chip stack 200.

Chip stack bonding may be achieved in a variety of ways. A preferredmethod utilizes oxide-oxide low-temperature direct bonding techniquesthat are commonly used in 3D wafer and chip integration, wherein oxidematerial deposited on the surface of the chips is used as the bondingagent. Metal-metal low temperature direct bonding techniques are alsoapplicable at surface areas where exposed metal configured to provide amating surface and electrical interface between chips are available.

Reference is now made to FIG. 8 to illustrate a final embodiment of theapplication that claims a multi-chip module 705 comprising one or morehigh speed semiconductor chip stacks 700A,700B bonded to the surface ofa fully integrated semiconductor chip carrier 704. The multi-chip module705 may also include other chips 702A,702B, which may comprisesemiconductor die or sensors, bonded to its surface. The high speedsemiconductor chip stacks 700A,700B may further comprise one or moreCPU, GPU, ASIC, FPGA, stack processor, sensor, electro-optic and memorychips. A specific embodiment of the invention claims high speedsemiconductor chip stacks 700A,700B that comprise other chips 702A,702Bthat functions as a nonvolatile memory comprising a resistive changeelement array, preferably a resistive change element array comprisingcarbon nanotube fabric as the resistive change element storage medium.

Cryptocurrencies, such as Bitcoin are mined using a complex computeralgorithm and maintained on a Blockchain. At the time of this filing,approximately 16 million of the 21 million total minable bitcoin havebeen mined. Bitcoin mining requires intense computational power. It isanticipated that the 5 million Bitcoin remaining will require 100 yearsto be mined using computer systems operating at contemporary clockspeeds. Clock speed sets the rate at which an algorithm can run. A chipstack computing module that increases the operational clock speed of allthe chips in a stack from the current standard of 7-7.5 GHz to anoperational clock speed closer to the intrinsic ≥20 GHz clock speeds ofthe semiconductor die embedded within the chip stack will process analgorithm approximately 3× faster. These faster clock speeds will allowthe remaining 5 million available Bitcoin to be mined in 33 years ratherthan 100 years. This higher efficiency represents substantial economicvalue. Therefore, a further embodiment of the invention claims highspeed semiconductor chip stacks 700A,700B that comprise other chips702A,702B that function as an ASIC chip specifically designed to processalgorithms that mine Bitcoin. While these high speed semiconductor chipstacks 700A,700B could be mounted on a printed circuit board, anadditional further embodiment claims a multi-chip module 705 thatcomprises high speed semiconductor chip stacks 700A,700B furthercomprising other (ASIC) chips 702A,702B designed to process algorithmsthat mine Bitcoin that are mounted on a fully integrated semiconductorchip carrier 704.

An additional embodiment includes one or more thermoelectric devicescomprising a 3D quantum gas layer mounted on the multi-chip module orembedded in high speed semiconductor chip stacks 700A,700B that are usedto pump heat from a CPU to a thermal reservoir, wherein the thermalreservoir may comprise a second thermoelectric device comprising a 3Dquantum gas layer that is used to convert the transferred heat back intopower that is, in turn, supplied back to the circuit.

What is claimed is:
 1. A high-speed semiconductor chip stack forming anelectrical circuit comprising one or more physical layers of perovskiteelectroceramic that functions as a capacitive dielectric material andsaid one or more physical layers are integrated as part of at least onesurface feature on a semiconductor die or an interposer embedded withinthe high speed semiconductor chip stack wherein the perovskiteelectroceramic forming said capacitive dielectric material furthercomprises a uniform distribution of ceramic grains with a grain sizediameter less than 50 nm such that orbital deformations constitute thesole mechanism contributing to the dielectric polarization within saidcapacitive dielectric material, wherein the perovskite electroceramichas a composition doped with ≤0.05 mol % of silicon dioxide that formselectrically insulating metal oxide phases at nanoscale grain boundarieswithin the perovskite electroceramic to neutralize the formation ofinternal conductive pathways and dissipation currents within thecapacitive dielectric material.
 2. The high-speed semiconductor chipstack of claim 1, wherein the capacitive dielectric material hasdielectric polarization rates measured on femto-second time scales. 3.The high-speed semiconductor chip stack of claim 1, wherein theperovskite electroceramic has a relative permittivity ε_(R)≤70.
 4. Thehigh-speed semiconductor chip stack of claim 3, wherein the capacitivedielectric material has a relative permittivity, ε_(R), in the range of200≤ε_(R)≤800.
 5. The high-speed semiconductor chip stack of claim 1,wherein the capacitive dielectric material comprises a thermodynamicallystable perovskite electroceramic.
 6. The high-speed semiconductor chipstack of claim 5, wherein the thermodynamically stable perovskiteelectroceramic may comprise titanate, zirconate, hafnate, niobate, ortantalate electroceramic, or admixture thereof.
 7. The high-speedsemiconductor chip stack of claim 6, wherein thermodynamically stableperovskite electroceramic comprises an admixture of three (3) or moreelements from the group comprising: scandium (Sc), titanium (Ti),vanadium (V), chromium (Cr), manganese (Mn), zinc (Zn), zirconium (Zr),niobium (Nb), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten(W), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd),samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dionysium(Dy), holomium (Ho), ytterbium (Yb), indium (In), tin (Sn), lead (Pb),or bismuth (Bi).
 8. The high-speed semiconductor chip stack of claim 3,wherein the perovskite electroceramic has a crystal lattice with anaverage atomic mass unit (amu) that is greater than
 25. 9. Thehigh-speed semiconductor chip stack of claim 8, wherein the crystallattice has an average atomic mass unit (amu) that is greater than 50.10. The high-speed semiconductor chip stack of claim 1, wherein thesurface feature is deployed to terminate an electrical discontinuity inthe electrical circuit.
 11. The high-speed semiconductor chip stack ofclaim 10, wherein the surface feature is deployed along a transmissionline.
 12. The high-speed semiconductor chip stack of claim 11, whereinthe surface feature and transmission line are deployed on asemiconductor die.
 13. The high-speed semiconductor ship stack of claim11, wherein the surface feature and transmission line are deployed on aninterposer.
 14. The high-speed semiconductor chip stack of claim 10,wherein the surface feature is deployed at a via.
 15. The high-speedsemiconductor chip stack of claim 14, wherein the surface feature andthe via are deployed on a semiconductor die.
 16. The high-speedsemiconductor chip stack of claim 14, wherein the surface feature andthe via are deployed on an interposer.
 17. A high-speed semiconductorchip stack forming an electrical circuit comprising one or more physicallayers of perovskite electroceramic that functions as a capacitivedielectric material and said one or more physical layers are integratedas part of at least one surface feature on a semiconductor die or aninterposer embedded within the high speed semiconductor chip stackwherein the perovskite electroceramic forming said capacitive dielectricmaterial further comprise a uniform distribution of ceramic grains witha grain size diameter less than 50 nm such that orbital deformationsconstitute the sole mechanism contributing to the dielectricpolarization within said capacitive dielectric material, wherein the atleast one surface feature minimizes reflections of higher frequencyharmonics of digital signal pulses such that an operational system clockspeed of the high-speed semiconductor chip stack optimally matches aslowest clock speed of a semiconductor die embedded within the highspeed semiconductor chip stack.
 18. The high-speed semiconductor chipstack of claim 17, wherein the semiconductor die embedded within thehigh speed semiconductor chip stack perform an optical orelectro-optical circuit function.
 19. The high-speed semiconductor chipstack of claim 17, wherein the semiconductor die embedded within thehigh speed semiconductor chip stack is a component of a wirelesstransmitter, wireless receiver, or wireless transceiver circuit module.